CISSOID unveils a High Voltage, 225°C Silicon Carbide (SiC) Power Switch with Logic-level Gate Control
CISSOID, the leader in high-temperature semiconductor solutions, unveils JUPITER, the first high-temperature silicon carbide high-voltage switch with seamless gate control through a simple logic-level 0/5V. CHT-JUPITER is a 600V normally-off switch rated for 1A drain current at 225°C. It includes a silicon carbide device, and it is packaged in a hermetically sealed TO-254 metal package, guaranteed for operation from -55°C up to +225°C.
CHT-JUPITER’s on-resistance ranges from 0.7 Ohms at 25°C to 1.25 Ohms at 225°C. Its input capacitance is typically 430pF. The gate leakage and drain off currents are respectively 160nA and 250µA at 225°C.
A key feature of this new device is its ability to be driven by a 0/5V logic-level signal, which dramatically reduces the complexity of the driver stage. In particular, CHT-JUPITER greatly simplifies the design of medium-power, high-voltage converters such as Switched Mode Power Supplies (SMPS) and Motor Drives that have to operate in extreme environments. With CHT-JUPITER, electronic engineers can decrease the complexity of their electrical schematics, shorten their bill-of-material, and improve the reliability, weight and size of their systems whilst reducing the need for cooling in their applications.
CHT-JUPITER’ data-sheet is available now from CISSOID web site. CHT-JUPITER can be ordered now for sampling and evaluation. Pricing starts at 481€/unit up to 200 units.
For more information, visit www.cissoid.com