Powering Industrial Applications

Eltek, a leader in high-efficiency power systems for telecommunications, industrial applications and renewable energy projects today announced it has been selected by Alstom Grid, a global supplier of power generation, transmission and distribution grid solutions, to provide the power supplies for high-voltage

Cree announces the release of its second generation SiC MOSFET enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200V MOSFETs deliver industry-leading power density and switching efficiency at half the cost per amp of Cree’s previous

Now available from TTI, Toshiba’s sixth generation IGBT technology offers improved switching loss/conduction loss trade off for increased efficiency and improved performance. This has been incorporated into Toshiba’s family of compact 600V devices for a variety of hard switching applications, including

CISSOID, a leader in high-temperature semiconductor solutions, introduced CHT-NEPTUNE, a high-voltage power switch in TO-257 package, suitable for power converters and motor drives guaranteed for reliable operation up to +225°C. CHT-NEPTUNE is a high-temperature, high-voltage, Silicon Carbide MOSFET

ROHM recently announced that they have begun mass-production of 1200V/180A-rated SiC MOS modules for inverters/converters used for industrial equipment, photovoltaic power conditioners and the like. This new product is the first* module to incorporate a power semiconductor comprised of just an SiC MOSFET,

The RNV14 from Stackpole is a ¼-watt high voltage metal film resistor which is able to withstand environments with high moisture. The high voltage metal film element has a maximum working voltage of 1600 volts DC, 1150 AC. It can also withstand thousands of surges of up to 7KV per IEC60065.14.1.

Well-suited for use in high-power switchmode power supply, motor drive, UPS, solar inverter, oil exploration, and other high-power, high-voltage applications, a family of industrial temperature, silicon carbide (SiC) standard power modules are offered with extended temperature ranges to meet next-generation

Richardson RFPD announced immediate availability and full design support capabilities for new package options on an RF power LDMOS transistor from Freescale Semiconductor. The MRFE6VS25 is an RF power transistor designed for both narrowband and broadband industrial, scientific and medical (ISM), broadcast,

Isolation components such as optocouplers that are used in applications that have user safety issues as a key aspect must not fail under continuous high-working-voltage bias conditions. Safety hazards exist and human life is at risk when such insulation fails and the high voltages come in