IR’s New DirectFET®plus Power MOSFET Family for DC-DC Switching Applications Improves Efficiency up to 2 Percent
International Rectifier, a world leader in power management technology, introduced a family of DirectFET®plus power MOSFETs featuring IR’s new generation of silicon that sets a new standard in efficiency for 12V input synchronous buck applications including next-generation servers, desktops, and notebooks.
The first two DirectFET®plus devices in the new family, the IRF6811 and IRF6894, reduce on-state resistance (RDS(on)) and gate charge (Qg) compared to previous generation devices to significantly improve efficiency up to 2 percent. In addition, the devices offer ultra low gate resistance (Rg) enabling further efficiency improvement by minimizing switching losses in DC-DC converters.
“The new IRF6811 and IRF6894 chipset leverages IR’s DirectFET® packaging technology and features a new generation of silicon which optimizes key MOSFET parameters to provide a best-in-class solution that delivers excellent performance, high reliability, and small footprint for next-generation computing needs,” said Omar Hassen, executive director, Low Voltage DirectFET® Products, Enterprise Power Business Unit.
The IRF6811 control MOSFET is available in a Small Can while the IRF6894 synchronous MOSFET is offered in a Medium Can. The 25V DirectFET®plus pair combines industry leading RDS(on) and Rg, combined with low charge to minimize conduction and switching losses. The IRF6894 also features a monolithically integrated Schottky that reduces losses associated with body diode conduction and reverse recovery. The new DirectFET®plus MOSFETs are footprint compatible with previous generation devices. Datasheets and application notes for the devices are available on the International Rectifier website.
Pricing for the IRF6811STRPBF and IRF6894MTRPBF begins at US $0.75 and US $1.75 each respectively in 10,000-unit quantities. Prices are subject to change.