Discrete Components, Embedded Systems, Gallium Nitride (GaN), MOSFETs & Power MOSFETs, Power Semiconductors
GaN Systems, a leading developer of gallium nitride power switching semiconductors, is exhibiting at PCIM Asia, Shanghai from June 24 – 26 and is showcasing a new addition to its market-leading range of GaN high power transistors for the first time in China on Booth 4D18. The company is also demonstrating production models of real customer applications using its devices. PCIM Asia is GaN Systems first major exhibition in China, which it expects to become an important market as gallium nitride power transistors increasingly replace silicon semiconductors in power electronics.
The new 60A GaN high-power enhancement-mode device, the GS66516T, expands GaN Systems’ range of power switching semiconductors, already the broadest product offering on the market with current ratings ranging from 8A to 250A. Based on the company’s Island Technology die design, packaged in low inductance and thermally efficient GaNPX packaging, the GS66516T also features new proprietary topside cooling technology, enabling it to be cooled using familiar and conventional heat sink or fan cooling techniques.
As gallium nitride technology moves into mainstream production in markets ranging from consumer to industrial and clean tech, early adopters have already released products onto the market that take advantage of GaN Systems’ innovative technology, which harnesses the superior fast switching performance of GaN and reduces power losses by up to 90%, resulting in smaller and far more efficient power electronics. At PCIM Asia, GaN Systems is demonstrating a 5kW 3-phase inverter power module from LS Industrial Systems of Korea, a leading Korean company focussed on delivering safe clean energy. Also being shown is a new 3kW, 800/380V DC/DC converter developed by the NextHome consortium in the USA, a group of consumer electronics manufacturers who are developing new power systems for use in the home that improve energy efficiency.