Cree, continues to extend its leadership in silicon carbide (SiC) power device technology with the release of the industry’s first all-SiC 1.7kV power module in an industry standard 62mm housing. Powered by Cree’s C2M™ large area SiC chip technology, the new half-bridge module exhibits an impressive 8mOhm on-resistance and 10-times higher switching efficiency than existing silicon (Si) module technology, capable of replacing Si IGBT modules rated at 400A or more.
The breakthrough performance of the new 1.7kV all-SiC power module allows design engineers to simultaneously reduce the size and cost of magnetic and cooling elements while achieving superior system efficiency and reliability. Unlike existing silicon-based systems in motor drive, grid-tie and utility scale solar inverter applications, the new Cree® power module also enables lower production costs and the development of smaller, lighter products with a lower overall total cost of ownership.
"The introduction of Cree’s all-SiC 1700V power module opens the door for SiC devices to become the switching device of choice for high-power motor drives," said Devin Dilley, director of medium voltage R&D for Vacon, a global supplier in the premium AC drives market. "The application of these modules in SiC-based motor drives will enable a reduction in the size and cost of filter components by up to 40 percent while simultaneously increasing system efficiency."
The superior switching efficiency and voltage capability of this new module enables simplified two-level topologies that are feasible at higher frequencies, eliminating the need to invest in complex, multi-level silicon-based solutions. The high power density that can be achieved with Cree’s newest half-bridge module further simplifies the implementation of modular system designs and enables extremely low mean time to repair for high overall system availability.
"Our latest module solidifies Cree’s commitment to support the needs of our customers and the industry demand for lower system cost," said Cengiz Balkas, general manager and vice president, Cree Power and RF. "By utilizing our state-of-the-art SiC technology, Cree’s power module portfolio enables higher efficiency, improved reliability and lower total cost of ownership."
The all-SiC 1.7kV, 8mOhm half-bridge module is available as part number CAS300M17BM2 at preferred distributors, including Mouser, Digi-Key and Richardson RFPD/Arrow RF & Power. Companion gate driver boards have been developed in cooperation with Prodrive, a Netherlands based innovator in power systems design and manufacturing. The boards are available through Cree sales channels or directly from ProDrive.