Cree has released two high-performance 50V gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in high power broadband amplifier, CW, and pulsed applications. Exhibiting high efficiency, high gain, and wide bandwidth capabilities, in addition to high power density, low parasitics, and high current gain cutoff frequency (FT), the 30W CGHV40030 and 100W CGHV40100 significantly improve the efficiency and bandwidth capabilities of multi-octave to instantaneous bandwidth amplifiers and a wide range of L- and S-Band products. Further, both the 30W and 100W 50V GaN transistors are available in a two-leaded flange or pill package.
The CGHV40030 transistor features 30W typical output power, up to 6GHz operation, 16dB gain at 1.2GHz, and a 0.96-1.4GHz broadband reference design, which makes it well suited for use in a wide variety of L-, S-, and C-Band amplifier applications.
The CGHV40100 transistor offers a general purpose, broadband solution for a variety of RF and microwave applications, but is especially well suited for linear and compressed amplifier circuits. It features 100W typical output power, up to 3GHz operation, 18dB small signal gain at 2.0GHz, and a 0.5-2.5GHz broadband reference design. The 100W GaN transistor also demonstrates 55% efficiency at PSAT.