IEEE PELS to hold webinar on eGaN power transistors

Date
05/20/2014

 PDF

Efficient Power Conversion (EPC), experts on the design and use of gallium nitride transistors, will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on June 4th from 10:30 AM to 11:30 AM (EDT).

In this webinar eGaN FETs are compared with MOSFETs in highly resonant wireless energy transfer using class-E, and a novel high efficiency voltage-mode class-D topology. Performance comparisons will be based on efficiency and sensitivity to load and coil coupling variations. Each of the topologies has been experimentally tested using the same source and device coil set with the same device rectifier. The experimental units operate with loosely coupled coils at 6.78 MHz (ISM band) and deliver between 15 W and 30 W.

The presenters, Alex Lidow, EPC CEO and co-founder, and Michael de Rooij, Executive Director of Applications Engineering, are the featured speakers. Both are widely published including being co-authors of GaN Transistors for Efficient Power Conversion, the first textbook on the design and applications of gallium nitride transistors.

Webinar Information:
Title: GaN Transistors – Crushing Silicon in Wireless Energy Transfer
Date: Wednesday, June 4, 2014
Time: 10:30 AM – 11:30 AM (EDT)
Fee: Free of Charge

Registration

EPC
 

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