Discrete Components, Embedded Systems, IGBTs & IGBT Modules, Power Semiconductors
Now available from MicroPower Direct, the IGD1208W is a hybrid integrated circuit specifically designed to drive N-channel IGBT modules. It provides the I/O isolation, high speed, drive voltage stability and fault protection required to control most MOS gated power devices. They are offered at very low cost.
The IGD1208W converts TTL compatible input signals into a fully isolated +15V/-8V Gate drive with a peak drive current of 8A. An internal, high speed opto-coupler provides an isolated (3,750V) control signal with a CMR ratio of 30 kV/µS for precise switching at high speed. A built-in “desaturation detector” provides short circuit protection. A fault signal is generated if the detector is activated. The timing of the fail signal is variable, allowing users to tailor the unit to specific application requirements.
A simple 15 VDC connection is used to power the IGD1208W. An internal, dual output DC/DC converter then provides isolated gate drive power.
The IGD1208W is packaged in a compact single-in-line (SIP) package to minimize board space. It is specified for use over the wide operating temp range of -40°C to +70°C.
The IGD1208W is recommended for use with:
• 600V Series IGBT (up to 600A)
• 1200V Series IGBT (up to 400A)
• 1700V Series IGBT (up to 200A)
Typical applications would include high frequency welding systems, solar converters, uninterruptible power supplies (UPS) and automotive/appliance motor drives.