Texas Instruments introduced 11 new N-channel power MOSFETs to its NexFET product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with the industry’s lowest on-resistance (Rdson) in a QFN package. In addition, TI’s new 12-V FemtoFET CSD13383F4 for low-voltage battery-powered applications achieves the lowest resistance at 84-percent below competitive devices in a tiny 0.6 mm by 1 mm package.
The CSD16570Q5B and CSD17570Q5B NexFET MOSFETs deliver higher power conversion efficiencies at higher currents, while ensuring safe operation in computer server and telecom applications. For instance, the 25-V CSD16570Q5B supports a maximum of 0.59 milliohms of Rdson, while the 30-V CSD17570Q5B achieves a maximum of 0.69 milliohms of Rdson. Read a blog, "Power MOSFET safe operating area (SOA) curves for designing with hot-swap and ORing FET controllers.” Download a 12-V, 60-A hot swap reference design featuring TI's CSD17570Q5B NexFET.
TI’s new CSD17573Q5B and CSD17577Q5A can be paired with the LM27403 for DC/DC controller applications to form a complete synchronous buck converter solution. The CSD16570Q5B and CSD17570Q5B NexFET power MOSFETs can be paired with a TI hot swap controller such as the TPS24720. Download the application note “Robust Hot Swap Designs” to understand how a transistor is selected as a pass element and how to ensure safe operation under all possible conditions.
Availability, packaging and pricing
Available in volume now from TI and its authorized distributors, the products range in price from US$0.10 for the FemtoFET CSD13383F4 to US$1.08 for the CSD17670Q5B and CSD17570Q5B, all in 1,000-unit quantities.