Toshiba's 6th generation 600-V IGBTs improve hard-switching efficiency

Date
11/21/2012

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Compact 15-, 20-, 30-, and 50-A devices with integrated diode suit motor drive, inverter, and UPS designs

Click image to enlarge: IGBTs based on Toshiba's new 6th generation process exhibit lower VCE(sat) conduction losses and reduced EON and EOFF switching losses.

TEE (Toshiba Electronics Europe) has announced a sixth generation IGBT technology that offers improved switching- and conduction-loss trade off for increased efficiency and improved performance. The new technology is the basis for a new family of compact 600-V devices that will suit a variety of hard switching applications including motor drives, solar inverters, and UPSs. Toshiba's sixth generation IGBT technology combines a finer pattern design and a thinner punch through wafer process than the previous generation, as well as a highly optimised vertical design. As a result, devices based around the new process are able to provide lower VCE(sat) conduction losses and reduced EON and EOFF switching losses. New products featuring the sixth generation technology offer current ratings of 15A (GT15J341), 20A (GT20J341), 30A (GT30J341) and 50A (GT50J342). Each of the parts integrates both the IGBT and a fast reverse-recovery diode connected between emitter and collector, in a single, compact package. All feature a typical VCE(sat) of 1.5V at the nominal current. The 15- and 20-A parts are supplied in a isolated TO-220SIS package, while the 30- and 50-A devices are available in an non-isolated TO-3P(N) (TO-247 equivalent) package. The efficiency and performance improvements offered by the new devices can be seen for example by comparing the GT50J342 50A device and the GT30J341 30A device with their predecessors. At TC = 150 °C with a current of 50 A the GT50J342 provides a reduction in VCE(sat) of 32% and respective reductions in EON and EOFF of 13% and 26%. This reduces overall losses by 24% with a DC bus voltage of 300 V and IGBT switching frequency of 20 kHz. At TC = 150 °C with a current of 30 A the GT30J341 provides a reduction in VCE(sat) of 30% and respective reductions in EON and EOFF of 12% and 33%. This reduces overall losses by 26% with a DC bus voltage 300 V and IGBT switching frequency of 20 kHz. Toshiba

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