Transphorm announced that it will present two Industry Sessions at APEC 2014. Firmly establishing itself at the forefront of GaN (Gallium Nitride) technology, Transphorm introduced the first 600V JEDEC-qualified GaN-on-Silicon HEMTs (high electron mobility transistors) at last year’s APEC show. At the upcoming APEC 2014 conference, experts from Transphorm will present an update on growing industry acceptance of GaN, along with proof of the significant advantages of using this technology for power conversion designs in actual implementations.
Both Transphorm presentations will take place on Thursday, March 20, 2014. The first session (IS2-4-2), authored by Drs. Kurt Smith and YiFeng Wu of Transphorm, is titled: “Moving Beyond Qualification to Verify the Long-Term Reliability of GaN Devices,” and will take place during the Industry Sessions on “Wide Band Gap Devices” from 8:30 a.m. to 11:30 a.m. The second session (IS2-5-3), by Transphorm’s YiFeng Wu, will be: “A GaN Speaker, What He Needs.” This presentation is scheduled during the 2:00 p.m. to 5:30 p.m. Industry Sessions on “How are Magnetics Catching up to SiC & GaN.”
APEC
Transphorm
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