Vishay Gen III P-Channel MOSFETs boast industry-low on-resistance in the PowerPAK SC-70 package

Date
09/16/2013

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Vishay Intertechnology extended its offering of TrenchFET® Gen III p-channel power MOSFETs in the ultra-compact PowerPAK® SC-70 package. Designed to save space and increase power efficiency in portable electronics, the Vishay Siliconix MOSFETs released today offer the industry's lowest on-resistance for -12 V, -20 V, and -30 V (12 V VGS and 20 V VGS) devices at -4.5 V and -10 V gate drives in the 2 mm by 2 mm footprint area. For load and battery switches in power management and control switches in synchronous buck converter applications for smartphones, tablet PCs, mobile computing devices, hard disk drives, and solid state drives, the -12 V SiA467EDJ offers an extremely low on-resistance down to 13 m? (-4.5 V). The -20 V SiA437DJ features values down to 14.5 m? (-4.5 V), and the -30 V SiA449DJ, and SiA483DJ provide low on-resistance to 20 m? (-10 V) and 21 m? (-10 V), respectively. In addition, the SiA437DJ and SiA467EDJ feature a high 30 A current rating for load switch applications with big inrush currents. The devices' industry-low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times, while their ultra-compact PowerPAK SC-70 package saves critical PCB space. For small point-of-load (POL) DC/DC and other synchronous buck applications, the MOSFETs' p-channel technology simplifies gate drive designs by eliminating the need for level-shifting circuitry or "bootstrap" devices. The SiA467EDJ, SiA437DJ, SiA449DJ, and SiA483DJ are 100 % Rg-tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU. Vishay

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