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Power Passives and Discretes

 



 

 

Power Passives and Discretes

September 2012
New radar system for industrial measurements achieves one-micron accuracy

Click image to enalarge: The radar system in the measurement chamber.

Scientists of KIT (Karlsruhe Institute of Technology) and RUB (Ruhr-Universität Bochum) with the help of a new radar system, have achieved an accuracy of one micron in joint measurements. The system
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Date:
09/29/2012
New oxidation-reduction-potential sensor available for eCow Rumen pH bolus analyser

Right: The e-Bolus which is programmed and sends reading to a handheld reader. Left: an e-Bolus kit.

eCow, founded by Dr Toby Mottram to make high quality instrumentation for dairy-cow monitoring, has two main product lines: A Rumen pH bolus analyser and an eCollar developed in 2011 to monitor andlog
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Date:
09/26/2012
MSC offers three new Renesas Electronics 600-V super-junction MOSFETs

Click image to enlarge: New Renesas Electronics super-junction MOSFETs available from MSC

MSC now offers three new Renesas Electronics 600-V super-junction MOSFETs featuring a on-state resistance of only 150 m? and a low gate charge of 20 nC. The three new devices have built-in fast body
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Date:
09/25/2012

Integrated Current Sensing
Competitive markets put pressure on OEMs to improve energy efficiency in their product designs. Accordingly, it is important to be able to monitor accurately currents through critical paths
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Date:
09/21/2012
IR's New 600V IGBTs Deliver Higher Power Density and Increased Efficiency for Motor Drive Applications
International Rectifier has introduced a family of 600V insulated-gate bipolar transistors (IGBTs) optimized for motor drive applications operating below 10kHz including compressors for refrigerators
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Date:
09/20/2012
Toshiba offers 1800 V RC-IGBT with monolithic integrated diode

Click image to enlarge

The GT40WR21 1800-V N-channel RC-IGBT is rated for 40 A and features a saturation voltage of only 2.9 V.

Toshiba Electronics Europe has announced an IGBT with an integrated reverse recovery diode that offers a voltage rating of 1800 V. The GT40WR21 is well suited for induction heating and induction cooking
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Date:
09/12/2012
Digi-Key Corporation inks global-distribution agreement with Kionix
Electronic-components distributor Digi-Key has announced a global distribution agreement with MEMS inertial-sensor provider Kionix. Kionix provides 3-axis accelerometers and gyroscopes, and 6-axis
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Date:
09/11/2012
Nordics nRF51 series evaluation kit to test wireless sensors

Click image to enlarge

nRF51 Series evaluation kit

ULP (Ultra low power) RF specialist Nordic Semiconductor has launched a low cost, battery-powered evaluation kit for its latest nRF51 Series 2.4GHz ULP ICs that supports real-world environmental testing
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Date:
09/10/2012
CISSOID signs franchise agreement with distributor SETRON
High-temperature semiconductor manufacturer CISSOID and German-based distributor SETRON have signed an extensive franchise agreement for the distribution of CISSOID products. With sales locations
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Date:
09/08/2012
STMicroelectronics enables precision 3D location sensing

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ST's new pressure sensor can accurately measure air pressure from 260 millibars (about 10 km elevation) to 1,260 millibars (about 1800 m below sea level).

STMicroelectronics has introduced a new pressure sensor that allows mobile phones and other portable devices to calculate their vertical elevation relative to sea level with very high accuracy. This
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Date:
09/06/2012
New Advanced Power Electronics high-speed 600-V discrete IGBTs feature low saturation voltage

Click image to enlarge

AP20GT60 family IGBTs feature a VCE rating of 600 V, a peak VGE of 20 V, and low saturation voltages.

Advanced Power Electronics has released a new family of high speed 600-V discrete IGBTs for use in AC and DC motor control, home appliances (such as air conditioning, refrigerators, microwave ovens),
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Date:
09/06/2012
TI strengthens current-shunt monitor portfolio

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Four new current-shunt monitors deliver high accuracy and a broad range of features.

Texas Instruments has expanded its portfolio of current-shunt monitors with four new devices. The ICs monitor power-supply current, voltage, and power values with features that reduce board space
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Date:
09/06/2012
New power electronics based on GaN MISHEMPTs

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Figure 1: EpiGaN deposits a unique in-situ SiN capping layer, grown by MOCVD on top of HEMT epi wafers.

GaN appears to be a highly suitable material for power switching devices operating at high frequencies without suffering major losses. The Promise of GaN This is due to the drastically
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Date:
09/04/2012

 



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