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Power Passives and Discretes

 




 

 

Power Passives and Discretes

October 2015
Wuerth Elektronik eiSos opens Competence Center Berlin

The Competence Center Berlin will primarily be a hub for hard- and software engineers designing and programming applications

Wuerth Elektronik eiSos opened its new Competence Center Berlin on 23 October 2015, marking a further milestone of the company’s expansion strategy. The Competence Center Berlin will primarily be a hub for hardware and software engineers designing and programming applications for new components, and supporting
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Date:
10/27/2015
Diodes' automotive MOSFETs protect vehicle ECUs against reverse-polarity battery connections

The DMP4015SPSQ 40V P-channel MOSFET

The DMP4015SPSQ 40V P-channel MOSFET introduced by Diodes Incorporated is designed to protect automotive Electronic Control Units (ECUs) against the risk of reverse-battery connection. ECUs are used in a growing number of automotive control applications and, with some vehicles deploying up to 80 ECUs, the need
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Date:
10/27/2015
KOA Speer's latest current-sense chip resistor handles high temps

UR73V 1206-size thick-film current sense resistor

KOA Speer Electronics introduced the UR73V, 1206-size thick-film current-sense resistor with a high operating temperature -55°C +155°C. The UR73V2B is AEC-Q200 qualified and has a 0.5W power rating and a resistance range of 10mΩ ~ 100mΩ. With a standard tolerance of ±1.0%, and T.C.R. values of
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Date:
10/15/2015

JFZ series X2 EMI suppression film caps rated to 310Vac

JFZ series X2 interference suppression, metalised polyester film, capacitor

Components Bureau introduces the JFZ series of X2 interference suppression, metalised polyester film, capacitors. A rated mains voltage of up to 310Vac allows the JFZ series to be used with 277Vac nominal inputs, prevalent in the US market for lighting, in addition to 115Vac and 230Vac nominal mains voltages.
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Date:
10/13/2015
Tunnel transistor may meet power needs of future chips

Schematic diagram illustrating the cross-sectional view of the ATLAS-TFET with ultra-thin bilayer MoS2 (1.3 nm) as the channel and degenerately doped p-type Ge as the source. Path for electron transport is shown by the red arrows, which run vertically (indicating band-to-band-tunnelling, BTBT) from the Ge source to the MoS2 and then laterally through the MoS2 layers (via drift diffusion) to the drain. As the Ge is highly doped, the tunnelling barrier height is mainly determined by the effective band overlap between Ge and MoS2 while the tunnelling width is determined by the MoS2 thickness (including the van der Waals gap).

A new kind of transistor consumes 90 percent less power than conventional transistors, dramatically exceeding a theoretical limit for electronics, researchers say. These findings could one day lead to super-dense low-power circuits as well as ultra-sensitive biosensors and gas sensors, the investigators added. The
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Date:
10/08/2015

 



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