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Power Passives and Discretes

 




 

 

Power Passives and Discretes

December 2015
KOA Speer introduces high-power 0612-size low-ohm resistor

WU73 1-Watt wide-terminal low-ohm chip resistor

KOA Speer Electronics introduced the WU73 1-Watt wide-terminal low-ohm chip resistor in an 0612 package. The WU73 is a precision resistor offering resistance values from 10mΩ to 100mΩ with a standard tolerance of ±1%. The WU73 chip resistor features wide side electrodes which provide better heat
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Date:
12/22/2015
Aero Stanrew, headquartered in Barnstaple, Devon, is a leader in the design and production of electromagnetic components and electronic systems for harsh environments and safety critical applications. The business is primarily focused on the commercial aerospace and defence markets with sole-source positions
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Date:
12/21/2015
TDK ACT45L common-mode chokes for automotive Ethernet now available in Europe through TTI

TDK ACT45L series

The latest common-mode chokes from TDK offer best-in-class noise suppression for automotive Ethernet, and is now available in Europe at TTI, a leading specialist distributor of electronic components. The TDK ACT45L series also boasts the smallest footprint of any common-mode choke currently available for automotive
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Date:
12/18/2015

STMicro's latest power MOSFETs enable smaller, greener automotive power

N-channel Power MOSFETs for automotive applications

STMicroelectronics has introduced a new family of high-voltage N-channel Power MOSFETs for automotive applications. These AEC-Q101-qualified devices are built using ST’s state-of-the-art MDmesh DM2 super-junction technology with fast-recovery diode. The devices feature a breakdown voltage over the 400V-650V
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Date:
12/15/2015
The first two parts of this article showed how the core losses for real waveforms could be modeled better. In the first part, a continuous expression was used to model a wide range of excitations. In the second part, the effect of duty cycle on the loss of the core material was included in a single equation.
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Date:
12/13/2015
Leti's local-strain techniques in FD-SOI fabrication to improve next-gen performance & energy use

Stress profile from 2D Raman extractions for Si MESAs after BOX creep process with 50 nm thick SiN

CEA-Leti announced it has developed two techniques to induce local strain in FD-SOI processes for next-generation FD-SOI circuits that will produce more speed at the same, or lower, power consumption, and improve performance. The local-strain solutions are dual-strained technologies: compressive SiGe for
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Date:
12/08/2015
Some of the key applications which drove the explosive growth of LEDs used to backlight thin film transistor (TFT) liquid-crystal displays (LCDs) included high definition (HD) TVs, portable tablet PCs, automotive infotainment displays and the myriad of handheld communication devices. However, in order to maintain
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Date:
12/07/2015
Electrolytic capacitors are an essential ingredient in AC/DC power supplies, providing high Capacitance x Voltage (CV) and low Equivalent Series Resistance (ESR) in low-volume packages that simply cannot be achieved cost-effectively using alternative parts. With power density demands increasing and as the only
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Date:
12/07/2015
For AC/DC power supplies, there is by nature phase differences and distortion between input currents and voltages due to the existence of holding capacitors and various load features. Here, only the instantaneous product of current and voltage produces power that can actually be used by the appliance, and the
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Date:
12/05/2015
In Part 1 of this discussion, we explored the functionality of a series-connected avalanche transistor pulser, specifically for the purpose of evaluating dV/dt ruggedness of SiC Schottky diodes. In this issue, the diodes are tested with the new pulser design. SiC Schottky diode dV/dt ruggedness
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Date:
12/04/2015

 



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