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Power Passives & Discretes

August 2019
The Road to Success for Power Semiconductors

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Figure 1: Comparison of Superjunction transistor, SiC MOSFET, and GaN HEMT

The commercial availability of Superjunction transistors 20 years ago, challenged and finally proved wrong the limitations of conventional silicon-based transistors with respect to on-state resistance. What was regarded as revolutionary at that time is standard today. Today there is not a single transistor from 25
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Are you SiC of Silicon? – Part 5

Anup Bhalla, Vice President Engineering, UnitedSiC

Ultra-High Voltage SiC and Supercascodes New applications are emerging that require high voltage switch technology which is significantly lower in balance-of-system costs and operating losses than silicon IGBT and IGCT technology. This spans a wide range from solid state transformers, MW motor drives, to smart
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High isolation, regulated DC/DC converters in compact package
The core characteristic of the TRI line is a sophisticated reinforced isolation system which is able to withstand high test voltages (9000 VDC for 1s and 5000 VAC for 60s) and working voltages (1000 VACrms). Complementing this isolation characteristic is a high Common Mode Transient Immunity of 15 kV/µs. The
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