Technical Features

February 2011
Impact of UnitedSiC Gen 4 Technology on Electric Vehicles

Table 1: Comparison of parameters for G4 750V SiC FETs with similar 650V SiC MOSFETs and 600V Superjunction fast diode FETs

The automotive market for Silicon Carbide (SiC) devices is widely expected to exceed the $1.5 billion threshold in 2025 with an annual growth rate (CAGR) of 38 percent. This is driven by the value provided by SiC based components in On-board chargers, DC-DC converters and in Traction inverters. With the launch of
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High Performance Design

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Figure 1: Equivalent gate drive circuit

The push for ever increasing demands on higher performance power supplies in combination with fast time to market pushes designers to the limit. All creativity is needed to get the performance
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