ABB is bringing affordable, safe and reliable electricity to remote communities thanks to its new integrated microgrid solution, MGS100, that enables solar power and battery energy storage.
The MGS100 has been built to perform in extreme environments, and has the ability to transform lives and businesses
Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS
EPC announces the EPC2046 power transistor for use in applications including wireless power, multi-level AC-DC power supplies, robotics, solar micro inverters, and low inductance motor drives. The EPC2046 has a voltage rating of 200 V and maximum RDS(on) of 25 mΩ with a 55 A pulsed output current.
Infineon starts volume production of first full-SiC-module, announces additional devices for its CoolSiC™ family
Higher efficiency, increased power density, smaller footprints and reduced system costs: these are the main advantages of transistors based on silicon carbide (SiC). Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is starting volume production for the EASY 1B, the first full-SiC module announced during PCIM
New gate driver IC targets applications from 400-690 VAC, including three-level topology inverters
Power Integrations, the leader in IGBT and MOSFET driver technology for medium- and high-voltage inverter applications, today announced an expansion of its SCALE-iDriver™ family of galvanically isolated single-channel gate driver ICs. The new devices support IGBT blocking voltages up to 1700 V, which are generally
LEM reinvents the fluxgate technology for high accuracy current measurement with a low noise level, over a wide temperature range
LEM reinvents the fluxgate technology, announcing the new IN 2000-S high accuracy current transducer for non-intrusive and isolated measurement of DC, AC and pulsed nominal current of 2000 A. This is the first model of a future family that will cover a range of different primary currents.
An Ultralow Distortion 15dB Gain Wideband Differential Amplifier Extends Outstanding Dynamic Range to Low Frequencies
Analog Devices announces the LTC6432-15, a wideband fully differential amplifier with 15dB gain, offering linearity of up to +50.3dBm OIP3 (output third-order intercept), very high OP1dB (output 1dB compression point) of +22.7dBm, and 3.2dB noise figure
Microchip’s PIC32MK Family is Packed with Analog Peripherals, Dual USB Capabilities and Support for up to Four CAN 2.0 Ports
The newest family of PIC32 microcontrollers (MCUs) is now available from Microchip Technology Inc.
TRENCHSTOP™ Advanced Isolation package for discrete IGBTs
Infineon Technologies introduces the new package technology TRENCHSTOP™ Advanced Isolation. It is available for TRENCHSTOP and TRENCHSTOP Highspeed 3 IGBTs for best-in-class thermal performance and simpler
This is the busy time of the year for those of us in the Power Electronics Industry.
APEC was a great show and PSD held their 8th annual golf tournament along with sponsors, Mouser Electronics and Coilcraft. Congratulations goes to United Silicon Carbide who proudly was the recipient
DC Current Shunt Resistors
Riedon, a specialist manufacturer of cutting-edge power and precision resistors, has expanded its portfolio of precision current shunts to provide one of the broadest range of current ratings available today. Responding to increases in the output levels from renewable energy sources,
Relative timing of all edges for the input clock (CLK) and the two outputs (HS & LS)
This article is Part Two of a mini-series, presenting useful SPICE model blocks to help motor control and power supply designers perform effective simulations. Part One introduced a block called “DUALCLOCK” that generates two floating clock outputs (see PSD, March 2017) for driving
μMaxPak Smart Single-Switch Cross-Section
Power WBG Package Requirements
The power Wide Band Gap (WBG) market is ramping with SiC and GaN devices replacing Si FETs and IGBTs for higher power and higher voltage products. These WBG materials will not only provide far superior performance and speed, but provide higher power
Dynamic characterization platform
Silicon carbide (SiC) MOSFETs switch up to five to ten times faster than silicon (Si) IGBTs and can operate at higher junction temperatures. Because they can switch on and off so quickly, they enable higher switching frequencies and therefore allow those designing inverters and other power converters to shrink
LTC3886 Schematic Converting 48VIN to 5V/15A & 12V/15A
Knowing the condition and operating status of a voltage regulator is perhaps the last remaining blind spots in today’s modern electronic systems since they do not normally have the means for directly configuring or remotely monitoring key operating parameters. It’s usually critical for reliable operation
See the different sources of power quality problems in the United States (left) and Europe (right). Source: Melhorn et al., 2005, McNulty et al., 2002, Manson & Targosz, 2008
According to a recent study published by the Electric Power Research Institute (EPRI), large industrial facilities in the US lose over $100 billion every year due to power problems including power supply variations and voltage disturbances. When the lights flicker at home, it’s an annoyance. But when
Schematic drawing of conventional HV planar MOSFET and SJ MOSFET
We are surrounded by electrically powered devices. The mobile phones in our pockets, the laptop computers we use on the job, the television in our living rooms, the servers powering the Internet, or even the EV car in our garage - all require electricity to operate and drive the demand for power supplies which