CHICAGO —Littelfuse, Inc. introduced its first 1700VSiC MOSFET, the LSIC1MO170E1000, expanding its portfolio of SiC MOSFET devices. An important addition to the Littelfuse SiC MOSFET product offering, the LSIC1MO170E1000 is a powerful addition to the company’s 1200V SiC MOSFETS and Schottky diodes already released. End-users will benefit from more compact, energy-efficient systems and also from a potential lower total cost of ownership.
High-efficiency benefits powered by SiC MOSFET technologies offer multiple advantages to many demanding applications including electric and hybrid vehicles, datacenters, and auxiliary power supplies. When compared to similarly-rated Si IGBTs, the LSIC1MO170E1000SiC MOSFET enables a number of system level optimization opportunities, including increased efficiency, increased power density, decreased cooling requirements, and potentially lower system level costs.
Additionally, the Littelfuse SiC MOSFETs deliver on par or better performance in all aspects when compared head-to-head with other industry-leading SiC MOSFET devices on the market. Typical applications for the SiC MOSFET LSIC1MO170E1000 include:
Switch-mode and uninterruptible power supplies
High-voltage DC/DC converters
The new 1700V, 1 Ohm SiC MOSFETs, available in a TO-247-3L package, offer these key benefits:
Optimized for high-frequency, high-efficiency applications
Extremely low gate charge and output capacitance
Low gate resistance for high-frequency switching
LSIC1MO170E1000 SiC MOSFETs are available in TO-247-3L packages in tubes in quantities of 450. Sample requests may be placed through authorized Littelfuse distributors worldwide. For a listing of Littelfuse distributors, please visit Littelfuse.com.