Selecting the right gate driver for a SiC MOSFET can have a significant impact on switching speed, efficiency, EMI performance, reliability, and overall system behavior. Yet identifying the optimal switch-driver combination often requires extensive datasheet analysis, simulation work, and design iteration before engineers can confidently move forward. Join onsemi for an exclusive look at Elite Pairing Studio™, a first-of-its-kind design tool that dramatically accelerates the process of matching SiC MOSFETs and gate drivers. Learn the key factors that influence successful pairings, discover how different gate driver characteristics affect SiC switching performance, and see how Elite Pairing Studio quickly evaluates potential combinations based on your application requirements. Through technical discussion and a live demonstration, you'll see how engineers can move from device selection to design confidence in a fraction of the traditional development time. In this session, you will: Understand the critical relationship between SiC MOSFETs and gate drivers and how it affects switching performance Learn which gate driver parameters have the greatest impact on efficiency, EMI, and system reliability Discover why traditional gate driver selection can be time-consuming and difficult to optimize See how Elite Pairing Studio™ helps engineers identify optimal SiC MOSFET and gate driver pairings in minutes rather than days or weeks