Wide-Bandgap Semis
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Navitas and Magnachip Announce Strategic Partnership to Accelerate High-Voltage and Ultra-High-Voltage Silicon Carbide Adoption
Navitas Semiconductor Corporation, an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and Magnachip Semiconductor Corporation, a designer and manufacturer of analog and mixed-signal power semiconductor platform solutions, today an
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Date:
07/23/2026
The Infineon RIC70115 supports both silicon and GaN MOSFET designs in low-side and high-side configurations, giving power system designers greater flexibility to adopt GaN-based power architectures in space platforms.
Infineon Technologies AG introduces the RIC70115, a radiation-hardened (rad hard) gallium nitride (GaN) high-electron mobility transistor (HEMT) driver designed for satellite and high-reliability space applications where power conversion performance and long-term operational integrity are critical requirements. Th
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Date:
07/15/2026
ADVANTICS’ liquid-cooled power conversion platform is based on modular 100 kW building blocks, enabling scalable systems up to the megawatt range.
Infineon Technologies AG will supply CoolSiC™ MOSFETs 1200 V and matching dual-channel EiceDRIVER™ 2EDB9259Y gate drivers to ADVANTICS, a technology leader in silicon carbide (SiC) power electronics and advanced control systems, for its new line of liquid-cooled power converters. The solutions enhance ef
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Date:
07/08/2026
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