Wide-Bandgap Semis

Current
Delphi Technologies Partners with Cree for Automotive SiC
DURHAM, N.C. — Delphi Technologies PLC and Cree, Inc. announce a partnership to utilize silicon carbide semiconductor device technology to enable faster, smaller, lighter and more powerful electronic systems for future electric vehicles
. . . Read More
Date:
09/10/2019
Silicon Carbide more Efficient than Silicon as Semiconductor

At the interface between silicon dioxide and silicon carbide, irregular clusters of carbon rings occur, which disturb the electronic function.

In power electronics, semiconductors are based on the element silicon - but the energy efficiency of silicon carbide would be much higher. Physicists of the University of Basel, the Paul Scherrer Institute and ABB explain what exactly is preventing the use of this combination of silicon and carbon in the scientific
. . . Read More
Date:
09/05/2019
Matching Gate Drivers to Enhancement Mode GaN Transistors

Click image to enlarge

Figure 1: Inductance common to source and gate drive causes voltage transients

Gallium Nitride (GaN) HEMT is the enabler for demonstrations of power converters with end-to-end efficiencies greater than today silicon-based solution, comfortably exceeding the most stringent 80+ spec for server and cloud data center or EU Code of Conduct Tier 2 standard for USB PD external adapter. 
. . . Read More
Date:
09/03/2019

Electronics Test and Measurement Market
The general-purpose electronics test equipment segment includes oscilloscopes, signal generators, digital multimeters, logic analyzers, spectrum analyzers, Bit Error Rate Testers (BERT), Vector Network analyzers, power meters, electronic counters, modular instrumentation, Automated Test Equipment (ATE), and
. . . Read More
Date:
09/03/2019