Wide-Bandgap Semis

Current

Navitas Unveils 5th Generation SiC Trench-Assisted Planar Technology

Navitas Semiconductor announced the launch of its 5th-generation GeneSiC technology platform. The High Voltage (HV) SiC Trench-Assisted Planar (TAP) MOSFET technology represents a significant technological leap over previous generations and will deliver an industry leading 1200V line of MOSFETs. It complements Na

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Date:

02/13/2026

SemiQ Establishes Distribution Partnership with NAC Semi to Expand Global Reach for Silicon Carbide Solutions

SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced a distribution agreement with NAC Semi (NAC Group, Inc.), a global electronic component design services and distribution company. This partnership

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Date:

02/12/2026

EPC Announces Strategic GaN Technology Licensing and Second Sourcing Agreement with Renesas

Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices, today announced a comprehensive licensing agreement with Renesas Electronics Corporation, a premier global supplier of advanced semiconductor solutions and high-voltage GaN transistors. Under the agree

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Date:

02/11/2026

Jason Lomberg, North American Editor, PSD

The Ubiquity of Wide Band-Gap Technology

Jason Lomberg, North American Editor, PSD

Welcome to the February issue! We’re a mere month away from the Applied Power Electronics Conference (APEC), and I’ve started hearing hints and rumblings of the premier event for power design professionals. A large event that attracts over 300 exhibitors and more than 6,000 attendees and which “foc

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Date:

02/01/2026

Ally Winning, European Editor, PSD

GaN Breaks Through Beyond its Traditional Limits

Ally Winning, European Editor, PSD

Welcome to the February edition of Power Systems Design. The Special Report this month is on wide bandgap materials. GaN and SiC have revolutionized the industry in terms of efficiency and power density for a wide number of power applications. However, those benefits trade off with additional complexity, and as

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Date:

02/01/2026

Click image to enlarge

Figure 1: Stability versus Current

- Low current condition (Vds=200V)

- High current condition (Vds=200V)

Balancing Speed and Stability in Parallel-Connected SiC MOSFETs Designs

Lizhong Zhou, Manager, Business Development, Toshiba

Engineers working with Silicon Carbide (SiC) MOSFETs encounter this firsthand when parallel devices begin exhibiting unexpected oscillations. What starts as a subtle waveform irregularity on an oscilloscope trace can quickly reveal deeper design sensitivities in high-speed switching environments. Parallel-connected SiC MOSFE

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Date:

02/01/2026

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Figure 1: The LTC7891 step-down (buck) converter schematic

Low Voltage GaN Converter Gate Drive and Measurement

Kurk Mathews, Senior Applications Manager, and Luis Onofre Lazaro, Applications Engineer, Analog Devices

Gallium nitride field-effect transistors (GaN FETs) offer faster switching speeds, smaller packages, and lower power losses than silicon FETs. These features allow power converters to run at higher frequencies, reducing overall solution size while maintaining high efficiency. While the basic DC-to-DC converter de

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Date:

02/01/2026