Wide-Bandgap Semis
January 2023
200 V, 10 mΩ GaN FET Joins Family of Footprint Compatible QFN Packaged Devices for High Efficiency
EPC introduces the 200 V, 10 mΩ EPC2307 in a thermally-enhanced QFN in a tiny 3 mm x 5 mm footprint.
The EPC2307 is footprint compatible with the previously released 100 V, 1.8 mΩ EPC2302, the 100 V 3.8 mΩ EPC2306, the 150 V, 3 mΩ EPC2305, the 150 V, 6 mΩ EPC2308, and the 200 V, 5 mΩ
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Date:
01/30/2023
Navitas CEO and co-founder Gene Sheridan
Navitas Semiconductor announced an agreement to acquire the remaining minority interest in its silicon control IC joint venture from Halo Microelectronics for a purchase price of $20 million in Navitas stock.
In 2021, Navitas and Halo created a joint venture to develop application-specific silicon c
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Date:
01/19/2023
Design Higher Density and Lower Cost Lidar Systems with New 80 V, 15 A GaN eToF Laser Driver IC
EPC announces the introduction of the EPC21701, a laser driver that monolithically integrates an 80 V, 40 A FET with gate driver and 3.3 logic level input into a single chip for time-of-flight lidar systems used in robotics, surveillance systems, and vacuum cleaners. It is tailored to lidar sy
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Date:
01/16/2023
ROHM's Fourth Generation SiC MOSFETs to be Used in Hitachi Astemo's Inverters for Electric Vehicles
ROHM Semiconductor announced the adoption of its new fourth generation SiC MOSFETs and gate driver ICs in electric vehicle inverters from Hitachi Astemo, Ltd., a leading Japanese automotive parts manufacturer.
As the electrification of cars rapidly advances towards achieving a decarbonized society,
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Date:
01/10/2023
Simon Keeton, executive vice president and general manager, Power Solutions Group, onsemi
onsemi and Ampt LLC announced their collaboration to meet the high demand for DC string optimizers. Ampt uses onsemi’s N-Channel SiC MOSFET, part of the EliteSiC family of silicon carbide (SiC) technologies, in its DC string optimizers for critical power switching applications.
Ampt string op
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Date:
01/05/2023
Silicon Carbide Family Solutions Deliver Industry-Leading Efficiency
onsemi introduced “EliteSiC” as the name of its silicon carbide (SiC) family. The company is set to showcase three new members of the family – the 1700 V EliteSiC MOSFET and two 1700 V avalanche-rated EliteSiC Schottky diodes. The new devices provide reliable, high-efficiency performance for energy in
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Date:
01/03/2023
Click image to enlarge
Figure 1. GaN powers products across the data center, industrial, automotive, consumer electronics, and Hi-Rel
Internet traffic has increased by nearly two billion new users in the past five years, creating challenging new demands on the overall Internet and cloud infrastructure.
At the same time, cloud operators have significantly ramped technology investments in sustainability, scalability, and profitability. At the ce
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Date:
01/01/2023
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