Wide-Bandgap Semis

December 2018

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Figure 1: Brushless DC (BLDC) motor

(Source: Globalsources.com)

Alex Lidow, CEO and Co-founder of EPC

Bringing Precision Control to Surgical Robots with eGaN® FETs and ICs In this series, how the superior switching speed of gallium nitride (GaN)-on-silicon low voltage power devices have enabled many new applications is being discussed. These applications are transforming industries such as lig

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Date:

12/31/2018

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Figure 1: A block diagram for Microchip’s PIC16F18446, which features high resolution Intelligent Analog peripherals such as an integrated 12-bit ADC2

IPM, Battery Chemistry & Charging Algorithms for Wearables

Keith Curtis, Microchip

The greatest challenge faced by both new battery chemistry and charging algorithm developers is obtaining an Application-specific Integrated Circuit (ASIC) design. Without silicon, new batteries and new charging algorithms have no way to acquire customers, and without customers – or at least potential cu

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Date:

12/22/2018

UnitedSiC introduces Kelvin connection parts into UF3C “FAST” FET series

Based on an efficient cascode configuration, this new series provides designers with very fast switching, high-power devices in a package capable of high-power dissipation. The Kelvin package avoids gate ringing and false triggering which would otherwise require slowing of switching speeds to manage the large co

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Date:

12/19/2018

Low profile buck-boost regulator with six-sided shielding

The converter is ideal for equipment such as USB voltage regenerators, 3.3V-to-5V converters, and supercapacitor or Li-Ion battery regulators. The all-round shielding enhances thermal performance as well as preventing electromagnetic interference. This non-isolated power module can supply up to 4A at 5V nominal output vo

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Date:

12/19/2018

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The Bourns SM91501AL and SM91502AL are shipping from RS in the EMEA and Asia Pacific regions.

RS Components adds signal transformers for battery monitoring

The new SM91501AL and SM91502AL are dual- and single-channel isolation transformer modules, respectively, with both devices offering common-mode chokes for noise rejection in BMS applications. Offering compliance with the AEC-Q200 standard for automotive applications, the modules are also implemented in reference de

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Date:

12/19/2018

Gallium Oxide as an Ultrawide Bandgap Semiconductor

American Institute of Physics

WASHINGTON, D.C. -- In microelectronic devices, the bandgap is a major factor determining the electrical conductivity of the underlying materials. Substances with large bandgaps are generally insulators that do not conduct electricity well, and those with smaller bandgaps are semiconductors. A more recent class of

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Date:

12/18/2018

Silicon Carbide FETs Capable of High-Power Dissipation

Princeton, New Jersey: UnitedSiC expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs in a TO-247-4L 4-pin Kelvin Sense package option. Based on an efficient cascode configuration, this new series provides designers with very

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Date:

12/11/2018

Figure 1. IGBT’s and Discrete Diodes

Challenges of SiC for Automotive Applications

Mitchell Van Ochten, Applications Engineer, ROHM Semiconductor

(Be sure to check out our PSDcast with ROHM on the same topic here: https://www.powersystemsdesign.com/articles/psdcast-the-formula-e-electric-racing-series/35/13290) Two of the biggest challenges that are preventing widespread adoption of Silicon Carbide (SiC) diodes and MOSFET devices for traction inverters ar

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Date:

12/11/2018

Powering, Protecting, and Augmenting EVs and HEVs

Jason Lomberg, North American Editor, PSD

It’s fitting that last month covered the Internet of Things, since the greatest beneficiary of a functional IoT is the automotive sector, which is the topic du jour for December. And a voluminous topic it is, with subsets ranging from replacing alternators with DC-DC converters to battery charger ICs, surface-mount fu

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Date:

12/11/2018

On the Road to Success for Electric Vehicles

Ally Winning, European Editor, PSD

This year seems to have gone faster than a Tesla in ludicrous mode. We all wondered when the year started if this would be the year that SiC and GaN technologies made the breakthrough into the mainstream, and turned out that, yes it was. GaN especially looks to have taken a major leap forward and we’ll hopefully se

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Date:

12/10/2018

High-Voltage GaN Exhibits 33 Percent More Power Output

GOLETA, Calif. — Transphorm Inc., along with solar energy innovator Inergy and design partner Telcodium Inc., announced that the upcoming Inergy Kodiak Extreme uses high-voltage GaN to reimagine what’s possible with portable power generators. The soon-to-be-released Kodiak Extreme utilizes a photovoltai

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Date:

12/05/2018

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Figure 1: Overview of a typical LIDAR system

The Power and Evolution of GaN - Part 3

Alex Lidow, CEO and Co-founder of EPC

How to Build an Ultra-Fast High-Power Laser Driver using eGaN® FETs - That Sees Farther, Better, and at a Lower Cost! In the first article in this series, how gallium nitride (GaN)-on-silicon low voltage power devices have enabled many new applications, such as light detection and ranging (Li

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Date:

12/02/2018