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Wide-Bandgap Semis

 



 

 

Wide-Bandgap Semis

December 2018
The Power and Evolution of GaN â€

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Figure 1: Surgical Robot

Bringing Precision Control to Surgical Robots with eGaN® FETs and ICs In this series, how the superior switching speed of gallium nitride (GaN)-on-silicon low voltage
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Date:
12/31/2018
IPM, Battery Chemistry & Charging Algorithms for Wearables

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Figure 1: A block diagram for Microchip’s PIC16F18446, which features high resolution Intelligent Analog peripherals such as an integrated 12-bit ADC2

The greatest challenge faced by both new battery chemistry and charging algorithm developers is obtaining an Application-specific Integrated Circuit (ASIC) design.  Without silicon, new batteries and new charging algorithms have no way to acquire customers, and without customers – or at least potential
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Date:
12/22/2018
RS Components adds signal transformers for battery monitoring

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The Bourns SM91501AL and SM91502AL are shipping from RS in the EMEA and Asia Pacific regions.

The new SM91501AL and SM91502AL are dual- and single-channel isolation transformer modules, respectively, with both devices offering common-mode chokes for noise rejection in BMS applications. Offering compliance with the AEC-Q200 standard for automotive applications,
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Date:
12/19/2018

Low profile buck-boost regulator with six-sided shielding
The converter is ideal for equipment such as USB voltage regenerators, 3.3V-to-5V converters, and supercapacitor or Li-Ion battery regulators. The all-round shielding enhances thermal performance as well as preventing electromagnetic interference.
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Date:
12/19/2018
UnitedSiC introduces Kelvin connection parts into UF3C “FAST†FET series
Based on an efficient cascode configuration, this new series provides designers with very fast switching, high-power devices in a package capable of high-power dissipation. The Kelvin package avoids gate ringing
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Date:
12/19/2018
WASHINGTON, D.C. -- In microelectronic devices, the bandgap is a major factor determining the electrical conductivity of the underlying materials. Substances with large bandgaps are generally insulators that do not conduct electricity well, and those with smaller bandgaps are semiconductors. A more recent class
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Date:
12/18/2018
Powering, Protecting, and Augmenting EVs and HEVs
It’s fitting that last month covered the Internet of Things, since the greatest beneficiary of a functional IoT is the automotive sector, which is the topic du jour for December. And a voluminous topic it is, with subsets ranging from replacing alternators with DC-DC converters to battery charger ICs, surface-mount
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Date:
12/11/2018
Challenges of SiC for Automotive Applications

Figure 1. IGBT’s and Discrete Diodes

(Be sure to check out our PSDcast with ROHM on the same topic here: https://www.powersystemsdesign.com/articles/psdcast-the-formula-e-electric-racing-series/35/13290) Two of the biggest
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Date:
12/11/2018
Princeton, New Jersey: UnitedSiC expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs in a TO-247-4L 4-pin Kelvin Sense package option. Based on an efficient cascode configuration, this new series provides
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Date:
12/11/2018
On the Road to Success for Electric Vehicles
This year seems to have gone faster than a Tesla in ludicrous mode. We all wondered when the year started if this would be the year that SiC and GaN technologies made the breakthrough into the mainstream, and turned out that, yes it was. GaN especially looks to have taken a major leap forward and we’ll hopefully
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Date:
12/10/2018
High-Voltage GaN Exhibits 33 Percent More Power Output
GOLETA, Calif. — Transphorm Inc., along with solar energy innovator Inergy and design partner Telcodium Inc., announced that the upcoming Inergy Kodiak Extreme uses high-voltage GaN to reimagine what’s possible
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Date:
12/05/2018
The Power and Evolution of GaN - Part 3

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Figure 1: Overview of a typical LIDAR system

How to Build an Ultra-Fast High-Power Laser Driver using eGaN® FETs - That Sees Farther, Better, and at a Lower Cost! In the first article in this series, how
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Date:
12/02/2018

 



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