Wide-Bandgap Semis
December 2018
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Figure 1: Brushless DC (BLDC) motor
(Source: Globalsources.com)
Bringing Precision Control to Surgical Robots with eGaN® FETs and ICs
In this series, how the superior switching speed of gallium nitride (GaN)-on-silicon low voltage power devices have enabled many new applications is being discussed. These applications are transforming industries such as lig
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Date:
12/31/2018
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Figure 1: A block diagram for Microchip’s PIC16F18446, which features high resolution Intelligent Analog peripherals such as an integrated 12-bit ADC2
The greatest challenge faced by both new battery chemistry and charging algorithm developers is obtaining an Application-specific Integrated Circuit (ASIC) design. Without silicon, new batteries and new charging algorithms have no way to acquire customers, and without customers – or at least potential cu
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Date:
12/22/2018
Based on an efficient cascode configuration, this new series provides designers with very fast switching, high-power devices in a package capable of high-power dissipation.
The Kelvin package avoids gate ringing and false triggering which would otherwise require slowing of switching speeds to manage the large co
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Date:
12/19/2018
The converter is ideal for equipment such as USB voltage regenerators, 3.3V-to-5V converters, and supercapacitor or Li-Ion battery regulators. The all-round shielding enhances thermal performance as well as preventing electromagnetic interference.
This non-isolated power module can supply up to 4A at 5V nominal output vo
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Date:
12/19/2018
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The Bourns SM91501AL and SM91502AL are shipping from RS in the EMEA and Asia Pacific regions.
The new SM91501AL and SM91502AL are dual- and single-channel isolation transformer modules, respectively, with both devices offering common-mode chokes for noise rejection in BMS applications. Offering compliance with the AEC-Q200 standard for automotive applications, the modules are also implemented in reference de
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Date:
12/19/2018
WASHINGTON, D.C. -- In microelectronic devices, the bandgap is a major factor determining the electrical conductivity of the underlying materials. Substances with large bandgaps are generally insulators that do not conduct electricity well, and those with smaller bandgaps are semiconductors. A more recent class of
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Date:
12/18/2018
Princeton, New Jersey: UnitedSiC expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs in a TO-247-4L 4-pin Kelvin Sense package option. Based on an efficient cascode configuration, this new series provides designers with very
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Date:
12/11/2018
Figure 1. IGBT’s and Discrete Diodes
(Be sure to check out our PSDcast with ROHM on the same topic here: https://www.powersystemsdesign.com/articles/psdcast-the-formula-e-electric-racing-series/35/13290)
Two of the biggest challenges that are preventing widespread adoption of Silicon Carbide (SiC) diodes and MOSFET devices for traction inverters ar
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Date:
12/11/2018
It’s fitting that last month covered the Internet of Things, since the greatest beneficiary of a functional IoT is the automotive sector, which is the topic du jour for December. And a voluminous topic it is, with subsets ranging from replacing alternators with DC-DC converters to battery charger ICs, surface-mount fu
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Date:
12/11/2018
This year seems to have gone faster than a Tesla in ludicrous mode. We all wondered when the year started if this would be the year that SiC and GaN technologies made the breakthrough into the mainstream, and turned out that, yes it was. GaN especially looks to have taken a major leap forward and we’ll hopefully se
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Date:
12/10/2018
GOLETA, Calif. — Transphorm Inc., along with solar energy innovator Inergy and design partner Telcodium Inc., announced that the upcoming Inergy Kodiak Extreme uses high-voltage GaN to reimagine what’s possible with portable power generators.
The soon-to-be-released Kodiak Extreme utilizes a photovoltai
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Date:
12/05/2018
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Figure 1: Overview of a typical LIDAR system
How to Build an Ultra-Fast High-Power Laser Driver using eGaN® FETs - That Sees Farther, Better, and at a Lower Cost!
In the first article in this series, how gallium nitride (GaN)-on-silicon low voltage power devices have enabled many new applications, such as light detection and ranging (Li
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Date:
12/02/2018
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