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    Wide-Bandgap Semis

    June 2024
    Nexperia to Invest 200 Million USD in Hamburg

    Nexperia to Invest 200 Million USD in Hamburg

    Nexperia to Invest 200 Million USD in Hamburg
    ­Semiconductor manufacturer Nexperia announced plans to invest USD 200 million (appx. 184 million Euros) to develop the next generation of wide bandgap semiconductors (WBG) such as silicon carbide (SiC) and gallium nitride (GaN), and to establish production infrastructure at the Hamburg site. At the sa
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    Date:
    06/28/2024
    StrongIRFET™ 2 Power MOSFETs in 30 V are Ready for Future Applications

    Click image to enlarge

    Figure 1: StrongIRFET™ and OptiMOS™ power MOSFET portfolio

    StrongIRFET™ 2 Power MOSFETs in 30 V are Ready for Future Applications
    By: He Dingyi, Technical Marketing and Application Engineer, Infineon Technologies

    ­The rapidly evolving world of electronics fuels the need for more efficient, powerful, and compact components. This drive for innovation extends to silicon power MOSFETs, where substantial efforts are dedicated to enhancing capabilities for a wide range of power electronic applications, including drives, switched
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    Date:
    06/28/2024
    Renesas Completes Acquisition of Transphorm

    Chris Allexandre, Senior Vice President and General Manager of Power at Renesas

    Renesas Completes Acquisition of Transphorm
    ­Renesas Electronics Corporation announced that it has completed the acquisition of Transphorm, Inc., a global leader in gallium nitride (GaN) power semiconductors, as of June 20, 2024. With the closing of the acquisition now completed, Renesas will immediately start offering GaN-based power products an
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    Date:
    06/20/2024
    40 V Rad Hard GaN FETs Set New Performance Standards for Space Applications

    40 V Rad Hard GaN FETs Set New Performance Standards for Space Applications

    40 V Rad Hard GaN FETs Set New Performance Standards for Space Applications
    ­EPC Space announces the introduction two new rad-hard GaN discretes with low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. The EPC7001BSH is a Rad-Hard eGaN® 40 V,
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    Date:
    06/13/2024
    Hofer Powertrain and ETH Zurich Initiate Innovative GaN Multilevel Inverter Development Project

    Development of a new, optimized, and highly efficient three-level GaN inverter that utilizes adaptive gate drivers and enables even lower switching losses than before

    Hofer Powertrain and ETH Zurich Initiate Innovative GaN Multilevel Inverter Development Project
    ­hofer powertrain announced the commencement of a groundbreaking research project in collaboration with ETH Zurich, focusing on the development of a state-of-the-art multilevel Gallium Nitride (GaN) traction inverter. Supported by a prestigious funding from Innosuisse, the Swiss Agency of Innovation Promotion, wh
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    Date:
    06/11/2024
    Navitas' Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging

    Navitas' Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging

    Navitas' Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging
    ­Navitas Semiconductor announces their new portfolio of Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, an
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    Date:
    06/06/2024
    Geely Auto Gears up NEV Transformation and Innovation with Long-Term SiC Supply Agreement and Joint Lab with STMicroelectronics

    Geely Auto Gears up NEV Transformation and Innovation with Long-Term SiC Supply Agreement and Joint Lab with STMicroelectronics

    Geely Auto Gears up NEV Transformation and Innovation with Long-Term SiC Supply Agreement and Joint Lab with STMicroelectronics
    ­STMicroelectronics and Geely Auto Group announced they have signed a long-term Silicon Carbide (SiC) supply agreement to accelerate their existing cooperation on SiC devices. Under the terms of this multi-year contract, ST will provide multiple Geely Auto brands with SiC power devices for mid-to-high-end ba
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    Date:
    06/05/2024
    Industrial CoolSiC MOSFETs 650 V G2 in TOLT and Thin-TOLL Package Increase System Power Density

    Infineon is expanding its portfolio of CoolSiC MOSFET discretes 650 V with two new product families housed in the Thin-TOLL 8x8 and TOLT packages.

    Industrial CoolSiC MOSFETs 650 V G2 in TOLT and Thin-TOLL Package Increase System Power Density
    ­The electronics industry is witnessing a significant shift towards more compact and powerful systems, driven by technological advancements and a growing focus on decarbonization efforts. With the introduction of the Thin-TOLL 8x8 and TOLT packages, Infineon Technologies AG is actively accelerating and supporting th
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    Date:
    06/03/2024
    Archive

    Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

    Mar 29,2026
    Matthew Russell, Master’s student at University College Cork, and a student engineer at Bourns Electronics Ireland

    STMicroelectronics' new MasterGaN power ICs Combine Flexibility with Advanced GaN Technology

    Feb 24,2026

    Wide Bandgap Devices Deliver on Their Promise

    Jan 26,2026
    Kevin Parmenter, Pins Out Engineering, for TSC America, Inc.

    onsemi to Develop Next-Generation GaN Power Devices with GlobalFoundries

    Dec 18,2025

     

     

     

     

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