Technical Features

Current

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Figure 1: Schematic of a high-voltage PowiGaN cascode switch

1250 V/1700 V GaN HEMTs for NVIDIA 800 VDC Architecture

Kamal Varadarajan & Chris Lee, Power Integrations

GaN-based power semiconductors are ideal for high-efficiency power converters thanks to their superior material properties. However, very few manufacturers offer GaN HEMTs rated above 650 V. The main challenge is that GaN devices built on silicon substrates require very thick buffer layers, which adds significant pr

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Date:

01/31/2026

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Figure 1: Side-by-side comparison of cloud-based vision processing vs the instant result of an Edge AI camera

Ultra-Low-Power Edge Processing: Redefining What's Possible in Always-On Intelligence

Dr. Mohamed M. Sabry Aly, CTO & Founder, EMASS

Since the global mainstreaming of generative AI in late 2022, AI now curates TikTok and Instagram, personalizes shopping on Amazon, helps us navigate in Google Maps, powers real-time translation, enables biometric authentication, and flags fraud in financial systems. AI is a daily utility, silently shaping our ch

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Date:

02/01/2026

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Figure 1: Software defined vehicle

Standardized Testing is Critical for Emerging Automotive SerDes and Zonal Architectures

Carrie Browen, Keysight Automotive

Emerging SerDes standards such as OpenGMSL, MIPI A-PHY, and ASA are designed to support high-bandwidth, asymmetric data links between sensors and central processing units. These standards are crucial for managing the growing volume of sensor data, supporting zonal architecture, and ensuring functional safety in

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Date:

02/01/2026

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Figure 1: Stability versus Current

- Low current condition (Vds=200V)

- High current condition (Vds=200V)

Balancing Speed and Stability in Parallel-Connected SiC MOSFETs Designs

Lizhong Zhou, Manager, Business Development, Toshiba

Engineers working with Silicon Carbide (SiC) MOSFETs encounter this firsthand when parallel devices begin exhibiting unexpected oscillations. What starts as a subtle waveform irregularity on an oscilloscope trace can quickly reveal deeper design sensitivities in high-speed switching environments. Parallel-connected SiC MOSFE

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Date:

02/01/2026

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Figure 1: The LTC7891 step-down (buck) converter schematic

Low Voltage GaN Converter Gate Drive and Measurement

Kurk Mathews, Senior Applications Manager, and Luis Onofre Lazaro, Applications Engineer, Analog Devices

Gallium nitride field-effect transistors (GaN FETs) offer faster switching speeds, smaller packages, and lower power losses than silicon FETs. These features allow power converters to run at higher frequencies, reducing overall solution size while maintaining high efficiency. While the basic DC-to-DC converter de

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Date:

02/01/2026