Technical Features

March 2019
SiC MOSFET Efficiency and Protection without Compromise

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Figure 1. Comparing SiC with conventional Silicon MOSFETs reveals the clearly superior semiconductor characteristics of the SiC material, which allows the construction of significantly smaller switching devices

The lower sheet resistance of wide-bandgap SiC materials (typically 1/100th that of conventional silicon) results in smaller devices for a given current capacity – valuable in space saving applications. In addition, the electric-breakdown- field for SiC (approximately 2.8 MV/cm) allows for a much
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Date:
12/03/2019
Are you SiC of Silicon? - Part 1

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Anup Bhalla, Ph.D., Vice President Engineering, UnitedSiC

SiC applications began in the 2000s with the adoption of SiC JBS diodes into PFC applications. This was followed by the use of SiC diodes and FETs in the PV industry. But the recent surge in applications relating to EV On-board chargers and DC-DC converters is driving SiC growth. The nascent adoption in the
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Date:
03/31/2019
Protect Small Sensors from the Harsh Industrial Environment

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Figure 1. Welding in Automotive Assembly Line

Sensors are ubiquitous in the electrically harsh industrial environment (Figure 1). As they increase in sophistication and shrink in size, they become more complex, requiring on-board switching regulators to deliver power more efficiently for minimal heat generation. How do you safely deliver low-voltage power
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Date:
03/30/2019
For the better part of this decade, power electronics technologists have been enabling new topologies with GaN (gallium nitride) transistors. Similarly, system innovators have been creating new levels of performance in electric and autonomous vehicles, industrial machines, televisions, laptop adapters, data
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Date:
03/12/2019

Qualifying SiC Devices to Industrial and Auto Standards

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Figure 1: RUIS test setup and waveforms for the current and the voltage during a UIS pulse.

A recent trend in the semiconductor market is the widespread adoption of silicon carbide (SiC) devices, including both Schottky barrier diodes (SBD) and power MOSFETs, for industrial and automotive applications. At the same time, the long-term reliability of these devices is a hot topic that should
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Date:
03/11/2019
Myth or Reality?

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Figure 1: Reliability Bathtub Curve

2012 marked the long-awaited arrival of 600 V+ Gallium Nitride (GaN) transistors. Having already begun to make a mark in low-voltage applications, the wide-bandgap semiconductor material was expected to bring to high voltage (HV) power systems all of its inherent benefits: faster switching, higher power density,
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Date:
03/11/2019
In my 40 years’ experience in power semiconductors, I have visited thousands of customers, big and small, on every continent except Antarctica.  When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall
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Date:
03/11/2019
What Should You Know About RoHS 3?

Image 1: Structural chemical formula and molecular structure of Dibutyl phthalate(DBP) – Source PRBX/Orange Deer studio

As specified in the European Directive 2015/863 dated 22nd of July 2019, electronic equipment manufacturers will have to comply with the third revision of the Restriction of Hazardous Substances (RoHS), referenced as RoHS 3. All categories of electrical and electronic equipment are affected except medical devices
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Date:
03/11/2019
Hybridization: Prospects for the Near Future of Automobiles

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Figure 1: Block diagram of an electric vehicle controller

New vehicle models with electric motors are automobile manufacturers’ lighthouse projects, even more so against the background of current arguments about combustion engines or, more specifically, diesel engines. In close alignment with policy makers, manufacturers are offering premiums to tempt
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Date:
03/11/2019
Taking the Heat Out of Wide-Bandgap Designs

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Figure 1: The GaN-on-Si wide bandgap HEMT structure

The demand for higher power density in many applications is driving the development of wide bandgap semiconductors. Compared to standard power transistors based on silicon, devices based on wide bandgap (WBG) materials such as silicon carbide (SiC) or gallium nitride (GaN) offer significant benefits. High electron
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Date:
03/11/2019
Normally-ON SiC JFETs â€

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Figure 1. Basic JFET operation

Many think that Shockley invented the ‘transistor’, which he announced at a press conference on July 4th 1951. His Bipolar Junction Transistor (BJT) was certainly a momentous achievement, with the basic design still surviving today. Shockley, however, also had ideas about transistors using an
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Date:
03/11/2019
 Reenvision Inductor Operation to Optimize New Applications

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Figure 1: Core material performance curves

What do new applications need in order to take advantage of new devices like wide band-gap semiconductors? They need the best inductors. And what is the best inductor for your application?   Answering that requires proper characterization of the inductors, which is more than can be conveniently obtained
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Date:
03/01/2019