Technical Features
July 2013
Table 1: Comparison of parameters for G4 750V SiC FETs with similar 650V SiC MOSFETs and 600V Superjunction fast diode FETs
The automotive market for Silicon Carbide (SiC) devices is widely expected to exceed the $1.5 billion threshold in 2025 with an annual growth rate (CAGR) of 38 percent. This is driven by the value provided by SiC based components in On-board chargers, DC-DC converters and in Traction inverters. With the launch of
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Date:
01/05/2021
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Figure 1: Block diagram showing high-level architecture of a smart phone
With un-tethered instant access to data, news and entertainment, consumers are spending more time on Smartphones and mobile devices. Device users are demanding faster connectivity, multi-core Ghz+
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Date:
07/08/2013
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Figure 1. Theoretical (left) and Actual (right) models of a capacitor.
Due to the constant evolution of consumer electronics, efficient power conversion is critical for reliable performance, and the filtering of output ripple is a critical factor in supplying consistent
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Date:
07/08/2013
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Figure 1: Greenchip solution based on TEA1720B and TEA1705
Mobile battery capacity is increasing to cope with the extra energy demands of power-hungry features, larger displays and more powerful CPUs. With bigger batteries to charge, how can system designers
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Date:
07/08/2013
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Figure 1: Block Diagram of an Isolated AC/DC Compound Converter
As Power Factor Correction (PFC) migrates to lower power AC/DC converters, maintaining efficiency at low loads becomes an increasing challenge. The approach usually taken involves adding an extra
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Date:
07/08/2013
Figure 1
For more than a decade, development of Infineon's CoolMOS™ super-junction (SJ) MOSFET technology has extended the "silicon limit line" that restricts the performance of planar-type power MOSFETs.
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Date:
07/05/2013
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