Technical Features

July 2013
SiC MOSFET Efficiency and Protection without Compromise

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Figure 1. Comparing SiC with conventional Silicon MOSFETs reveals the clearly superior semiconductor characteristics of the SiC material, which allows the construction of significantly smaller switching devices

The lower sheet resistance of wide-bandgap SiC materials (typically 1/100th that of conventional silicon) results in smaller devices for a given current capacity – valuable in space saving applications. In addition, the electric-breakdown- field for SiC (approximately 2.8 MV/cm) allows for a much
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Date:
12/03/2019
New power architecture addresses PFC load efficiency issues

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Figure 1: Block Diagram of an Isolated AC/DC Compound Converter

As Power Factor Correction (PFC) migrates to lower power AC/DC converters, maintaining efficiency at low loads becomes an increasing challenge. The approach usually taken involves adding an extra
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Date:
07/08/2013
Technology trends in mobile charging

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Figure 1: Greenchip solution based on TEA1720B and TEA1705

Mobile battery capacity is increasing to cope with the extra energy demands of power-hungry features, larger displays and more powerful CPUs. With bigger batteries to charge, how can system designers
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Date:
07/08/2013
Filter capacitor considerations

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Figure 1. Theoretical (left) and Actual (right) models of a capacitor.

Due to the constant evolution of consumer electronics, efficient power conversion is critical for reliable performance, and the filtering of output ripple is a critical factor in supplying consistent
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Date:
07/08/2013

MEMS Time-Keeper Extends Standby Life of Mobile Devices

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Figure 1: Block diagram showing high-level architecture of a smart phone

With un-tethered instant access to data, news and entertainment, consumers are spending more time on Smartphones and mobile devices. Device users are demanding faster connectivity, multi-core Ghz+
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Date:
07/08/2013
Next-generation SJ MOSFETs extend performance of silicon-based power devices

Figure 1

For more than a decade, development of Infineon's CoolMOS™ super-junction (SJ) MOSFET technology has extended the "silicon limit line" that restricts the performance of planar-type power MOSFETs.
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Date:
07/05/2013