Technical Features
July 2013
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Figure 1. Comparing SiC with conventional Silicon MOSFETs reveals the clearly superior semiconductor characteristics of the SiC material, which allows the construction of significantly smaller switching devices
The lower sheet resistance of wide-bandgap SiC materials (typically 1/100th that of conventional silicon) results in smaller devices for a given current capacity – valuable in space saving applications. In addition, the electric-breakdown- field for SiC (approximately 2.8 MV/cm) allows for a much
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Date:
12/03/2019
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Figure 1: Block Diagram of an Isolated AC/DC Compound Converter
As Power Factor Correction (PFC) migrates to lower power AC/DC converters, maintaining efficiency at low loads becomes an increasing challenge. The approach usually taken involves adding an extra
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Date:
07/08/2013
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Figure 1: Greenchip solution based on TEA1720B and TEA1705
Mobile battery capacity is increasing to cope with the extra energy demands of power-hungry features, larger displays and more powerful CPUs. With bigger batteries to charge, how can system designers
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Date:
07/08/2013
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Figure 1. Theoretical (left) and Actual (right) models of a capacitor.
Due to the constant evolution of consumer electronics, efficient power conversion is critical for reliable performance, and the filtering of output ripple is a critical factor in supplying consistent
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Date:
07/08/2013
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Figure 1: Block diagram showing high-level architecture of a smart phone
With un-tethered instant access to data, news and entertainment, consumers are spending more time on Smartphones and mobile devices. Device users are demanding faster connectivity, multi-core Ghz+
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Date:
07/08/2013
Figure 1
For more than a decade, development of Infineon's CoolMOS™ super-junction (SJ) MOSFET technology has extended the "silicon limit line" that restricts the performance of planar-type power MOSFETs.
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Date:
07/05/2013
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