Technical Features

July 2013

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Figure 1: Schematic of a high-voltage PowiGaN cascode switch

1250 V/1700 V GaN HEMTs for NVIDIA 800 VDC Architecture

Kamal Varadarajan & Chris Lee, Power Integrations

GaN-based power semiconductors are ideal for high-efficiency power converters thanks to their superior material properties. However, very few manufacturers offer GaN HEMTs rated above 650 V. The main challenge is that GaN devices built on silicon substrates require very thick buffer layers, which adds significant pr

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Date:

01/31/2026

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Figure 1: Block diagram showing high-level architecture of a smart phone

MEMS Time-Keeper Extends Standby Life of Mobile Devices

Jehangir Parvereshi, SiTime

With un-tethered instant access to data, news and entertainment, consumers are spending more time on Smartphones and mobile devices. Device users are demanding faster connectivity, multi-core Ghz+

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Date:

07/08/2013

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Figure 1. Theoretical (left) and Actual (right) models of a capacitor.

Filter capacitor considerations

Pat Hollenbeck, AVX

Due to the constant evolution of consumer electronics, efficient power conversion is critical for reliable performance, and the filtering of output ripple is a critical factor in supplying consistent

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Date:

07/08/2013

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Figure 1: Greenchip solution based on TEA1720B and TEA1705

Technology trends in mobile charging

Geert Willemsen, NXP Power Solutions

Mobile battery capacity is increasing to cope with the extra energy demands of power-hungry features, larger displays and more powerful CPUs. With bigger batteries to charge, how can system designers

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Date:

07/08/2013

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Figure 1: Block Diagram of an Isolated AC/DC Compound Converter

New power architecture addresses PFC load efficiency issues

Thomas Lawson, Cognipower

As Power Factor Correction (PFC) migrates to lower power AC/DC converters, maintaining efficiency at low loads becomes an increasing challenge. The approach usually taken involves adding an extra

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Date:

07/08/2013

Figure 1

Next-generation SJ MOSFETs extend performance of silicon-based power devices

Franz Stückler, Infineon Technologies

For more than a decade, development of Infineon's CoolMOS™ super-junction (SJ) MOSFET technology has extended the "silicon limit line" that restricts the performance of planar-type power MOSFETs.

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Date:

07/05/2013