Technical Features

    July 2013
    Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

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    Figure 1: Gate driver circuit diagram with a Bourns transformer

    While gate driver-based converters deliver improved efficiency, speed and signal integrity, their high frequency switching features can produce elevated levels of conducted electromagnetic interference (EMI), posing challenges to electromagnetic compatibility (EMC) and overall system reliability. To solve this
    Date:
    03/29/2026
    MEMS Time-Keeper Extends Standby Life of Mobile Devices

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    Figure 1: Block diagram showing high-level architecture of a smart phone

    With un-tethered instant access to data, news and entertainment, consumers are spending more time on Smartphones and mobile devices. Device users are demanding faster connectivity, multi-core Ghz+
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    Date:
    07/08/2013
    Filter capacitor considerations

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    Figure 1. Theoretical (left) and Actual (right) models of a capacitor.

    Due to the constant evolution of consumer electronics, efficient power conversion is critical for reliable performance, and the filtering of output ripple is a critical factor in supplying consistent
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    Date:
    07/08/2013
    Technology trends in mobile charging

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    Figure 1: Greenchip solution based on TEA1720B and TEA1705

    Mobile battery capacity is increasing to cope with the extra energy demands of power-hungry features, larger displays and more powerful CPUs. With bigger batteries to charge, how can system designers
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    Date:
    07/08/2013
    New power architecture addresses PFC load efficiency issues

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    Figure 1: Block Diagram of an Isolated AC/DC Compound Converter

    As Power Factor Correction (PFC) migrates to lower power AC/DC converters, maintaining efficiency at low loads becomes an increasing challenge. The approach usually taken involves adding an extra
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    Date:
    07/08/2013
    Next-generation SJ MOSFETs extend performance of silicon-based power devices

    Figure 1

    For more than a decade, development of Infineon's CoolMOS™ super-junction (SJ) MOSFET technology has extended the "silicon limit line" that restricts the performance of planar-type power MOSFETs.
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    Date:
    07/05/2013
    Archive

    Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

    Mar 29,2026
    Matthew Russell, Master’s student at University College Cork, and a student engineer at Bourns Electronics Ireland

    1250 V/1700 V GaN HEMTs for NVIDIA 800 VDC Architecture

    Jan 31,2026
    Kamal Varadarajan & Chris Lee, Power Integrations

    Future-Proof Automotive High-Voltage-to-SELV Conversion

    Dec 30,2025
    Greg Green, Director of Automotive Marketing, Vicor

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