Technical Features

July 2018

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Figure 1: Schematic of a high-voltage PowiGaN cascode switch

1250 V/1700 V GaN HEMTs for NVIDIA 800 VDC Architecture

Kamal Varadarajan & Chris Lee, Power Integrations

GaN-based power semiconductors are ideal for high-efficiency power converters thanks to their superior material properties. However, very few manufacturers offer GaN HEMTs rated above 650 V. The main challenge is that GaN devices built on silicon substrates require very thick buffer layers, which adds significant pr

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Date:

01/31/2026

Figure 1: MLV (left) vs. TVS diode (right) temperature derating

Transient Protection Solutions in Automobiles

Ron Demcko, Fellow, AVX Corporation

Thanks to modern technology, passenger vehicles are now safer, more enjoyable, and more efficient than ever. Today’s automobiles utilize incredible amounts of computing power to improve the overall driving experience in several different ways. For example, arrays of sensors and dedicated processing units n

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Date:

07/31/2018

Silicon Carbide Devices for Automotive Power Electronics

Dennis Meyer, Applications Engineer, Microsemi (a Microchip Company) & Jason Chiang, Strategic Marketing Manager, Microsemi (a Microchip Company)

Automotive OEMs and their suppliers have been on the high power, high growth vehicle electrification path for hybrid electric vehicles (HEVs)/electric vehicles (EVs) and beyond even to electrification of busses, trucks, trains and more electric aircraft (MEA). With high power demands beyond the efficiency and r

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Date:

07/31/2018

Optimizing Class-D Audio Amplifier Output Filters

Christopher Hare, Technical Marketing Engineer, Coilcraft, Inc.

When audio applications require the highest power efficiency, lowest heat generation, smallest size, and lightest weight, Class-D switched-mode amplifiers surpass the linear class amplifiers. This makes Class-D amplifiers the best choice for extending battery life in DC-powered audio applications, such as

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Date:

07/31/2018