Figure 1. Comparing SiC with conventional Silicon MOSFETs reveals the clearly superior semiconductor characteristics of the SiC material, which allows the construction of significantly smaller switching devices
Thorsten Schmidt, Technical Product Manager, Power Integrations
The lower sheet resistance of wide-bandgap SiC materials (typically 1/100th that of conventional silicon) results in smaller devices for a given current capacity – valuable in space saving applications. In addition, the electric-breakdown- field for SiC (approximately 2.8 MV/cm) allows for a much
Jos van der Loop, Product Marketing Manager, Low Energy & VoIP Division, Dialog Semiconductor
A new generation of low power, self-configuring network devices capable of remote management via a web connected smartphone or tablet PC are set to deliver the next healthcare revolution.
The cost of providing healthcare to those recovering from illness or surgery has risen rapidly in recent years
Figure 1: Scheme for PLC technology. In a TLACS system from Nyx Hemera Technologies a local controller integrates PLC to communicate with the network controller over the AC line and controls each lamp using a standard DALI interface