Military, Aerospace & Hi-Rel
Current
The devices feature an improved EMI immunity for automotive and industrial equipment applications requiring high-speed sensing in harsh environments, such as vehicle engine control units and anomaly detection systems for factory automation equipment.
In recent years, advancements in electrification and mounting d
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Date:
09/23/2021
Acopian launched their encapsulated wide input DC to DC Converter line of power supplies rated up to 60W. Wide-range DC inputs are set at 9-18 VDC, with output voltages ranging from 3.3 VDC to 48 VDC and up to 8A. Threaded mounting holes permit them to be mounted to a chassis, cabinet wall or
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Date:
09/21/2021
Gowanda Electronics announces the introduction of a new non-magnetic RF thru-hole (leaded) inductor series – 28MG. This series was designed to address the market need for non-magnetic inductors that could achieve inductance values of up to 18 µH.
This series is ideal for use in medical imaging equipment
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Date:
09/17/2021
The TMC6140-LA 3-phase MOSFET gate driver integrates all three bottom shunt amplifiers to provide a complete motor drive solution with 30-percent improved power efficiency, while simplifying design by reducing component count by half when compared to similar solutions.
The TMC6140-LA is optimized for performan
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Date:
09/16/2021
The new drivers improve the performance of multiple parallel EconoDUAL modules by 20%, allowing users to eliminate one of every six modules from power inverters and converter stacks. In addition to saving the cost of the driver and module, this reduces control complexity and costs related to modules, wiring, hardware,
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Date:
09/16/2021
The nine new series (LCW15, LCW25, LCW35, LCW50, LCW75, LCW100, LCW150, LCW200 and LCW320) offer power levels from 15W to 320W. All models meet EN 55032 Class B conducted and radiated emissions for easy and low-cost integration and feature an integrated connector cover to enhance safety once installed
The i
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Date:
09/16/2021
The power module in a SIP-3 package represents a cost-effective solution to meet the requirements for the real-world voltage transients of a 24 V industrial power architecture. The new module operates from 16 to 36 VIN and generates a fixed output voltage of 12 V with current up to 1 A.
The FDSM
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Date:
09/16/2021
They are suitable for both low and high switching frequencies. This new technology offers 40 percent improved RDS(on) and over 50 percent lower gate charge (Qg) compared to previous StrongIRFET™ devices. The higher power efficiency thus generated ensures improved overall system performance. The Infineon StrongI
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Date:
09/16/2021
Designed for industrial applications requiring high levels of safety, the LHP150F and the LHP300F are certified according to EN62477-1 (OVC III). The products work over a wide universal input voltage range of 85 to264VAC and have a high typical efficiency rating of 93%. The LHP150F and LHP300F are available in
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Date:
09/16/2021
The output is closely matched between high-side and low-side outputs, to handle high-frequency switching of GaN enhancement-mode FETs.
Also suitable for driving N-channel silicon MOSFETs at up to 20V, the STDRIVEG600 allows the flexibility to apply up to 6V gate-source voltage (VGS) on GaN devices to e
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Date:
09/16/2021
Streamlining power system design and assuring ongoing reliability, this automotive-compliant device provides a controlled and protected power path. It is rated to handle continuous load currents of up to 1.5A. Key applications include protection of vehicle USB ports and ECU supply rails, and infotainment and telem
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Date:
09/16/2021
The handbook summarises tests undertaken: from temperature stability and short-term stability to supply pushing and more.
The IQRB-2 fills the gap between the IQRB-1 and the IQRB-3; the IQRB-1 delivers a superb price performance ratio, whereas the IQRB-3 offers an exceptional phase noise performa
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Date:
09/16/2021
Gen2 offers higher efficiency and power density levels. The outstanding performance and reliability combined with the capability of 8-inch GaN-on-Si wafer production mark Infineon’s strategic outreach to the growing demand for GaN power semiconductors. In accordance with market requirements, Gen2 will be developed
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Date:
09/16/2021
The reference design is a general purpose motor drive which features a nominal power of 22 kW and can be operated directly on a 380 to 480 V three-phase grid. The design can be fully re-used for customization and allows customers to evaluate Infineon’s products under real operating conditions. It is suitable
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Date:
09/16/2021
The lenses provide greater flexibility across the range of applications for thermal imaging cameras by delivering increased accuracy and precise image quality. All lenses are interchangeable and compatible with Fluke’s range of thermal imaging cameras.
Thermal imaging applications
Thermal im
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Date:
09/16/2021
The new resistor features a standoff construction that offers an improvement over regular flip chip technology.
The FRFS0402 is ideally suited for use in telecommunication network equipment (including 5G, downhole data center, or fiber optics), medical equipment (including pace makers or hearing-
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Date:
09/16/2021
Their clever design purposefully integrates high performance, versatility, interoperability and regulatory compliance to fulfil evermore demanding worldwide applications.
The built-in Digital Signal Processor (DSP) supports the PMBus open standard power management protocol, which enables diagnosti
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Date:
09/16/2021
Power Integrations announced SCALE-iFlex Single gate-drivers for the popular “New Dual” 100 mm x 140 mm IGBT modules. The compact new drivers support modules up to 3.3 kV and are available now for design-in. The SCALE-iFlex Single gate-drivers are ideal for light-rail, renewable energy generation an
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Date:
09/12/2021
From its inception PRBX has grown to become a leading innovator in power solutions for industrial, medical, transportation and defense application.
Powerbox, one of Europe’s largest power supply companies, and for more than four decades a leading force in optimizing power solutions for demanding applications, announces it has consolidated its Swedish operations to a new facility located at Hägersten, South of Stockholm.
Originally established at Gnesta
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Date:
09/11/2021
The Japanese company took that opportunity to host a press conference to explain the reasons for the acquisition further and to launch 39 of the company’s Winning Combinations to demonstrate how the Dialog portfolio meshes with Renasas products to allow Rensas to compete in new areas and applications. The fi
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Date:
09/06/2021
Click image to enlarge
Figure 1. WBG and silicon power switch Infineon brands positioning
Introduction
Today’s switch-mode power supplies (SMPS) are smaller, more efficient, and lower-cost than ever. The key to their performance is the power switch technologies at their heart – but how should designers choose the right material for this and find the best component to meet their needs?
While silicon is the most widely-known constituent of semiconductors, a new group of wide bandgap (WBG) materials is increasingly finding its way into applications. One example is gallium nitride (
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Date:
09/01/2021
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