Military, Aerospace & Hi-Rel
March 2022
Estimating the useable lifetime of electronic components has always been an important task for design engineers, especially for critical applications where the design might see service for several decades. Although manufacturers do specify a lifetime on datasheets, that is under ideal conditions at normal operati
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Date:
03/30/2022
Power ratings now available are 1400 W continuous / 2400 W peak (BMR4912307/856), and 1540 W continuous / 2450 W peak (BMR4913208/857).
The new variants all feature the Flex Power Modules’ ‘Hybrid Regulated Ratio (HRR)’ technique where output voltages vary in a ratio to the input voltage but not
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Date:
03/28/2022
Semiconductor manufacturers commonly provide simulation models for their MOSFETs, but these usually only include a limited number of device parameters which have been modelled at typical operating temperatures. Nexperia’s new advanced models capture the thermal interdependency of the complete set of device pa
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Date:
03/28/2022
With its single-switch topology and high integration, including current-sensing and protection circuitry also built-in, the VIPerGaN50 comes in a compact and low-cost 5mm x 6mm package. The speed of the integrated GaN transistor allows a high switching frequency with a small and lightweight flyback transformer
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Date:
03/28/2022
The DIODES AP7387 devices are used in applications such as cordless vacuum cleaners, smoke detectors, power tools, and various other household appliances.
The devices have an input voltage range spanning from 5V to 60V, which gives them the flexibility to be connected to 5V, 9V, 12V, 24V, and 48V rai
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Date:
03/28/2022
The components will ideally be applied in power supply circuits for industrial equipment such as base stations and data centers along with IoT communication devices.
In recent years – due to the rising demand for server systems in response to the growing number of IoT devices – improving powe
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Date:
03/28/2022
Power Integrations announced the HiperPFS™-5 family of power-factor-correction (PFC) ICs with an integrated 750 V PowiGaN gallium-nitride switch. With efficiency of up to 98.3 percent, the new ICs deliver up to 240 W without a heat sink and can achieve a power factor of better than 0.98. HiperPFS-5 ICs are i
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Date:
03/28/2022
Benefiting from the latest power switching technologies, the LHA10F and LHA15F are 15% smaller and offer a leakage current 50% lower than conventional products on the market. Designed for use in a wide range of applications, the LHA10F and LHA15F are able to operate in a wide temperature range from -10 to +70 degr
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Date:
03/28/2022
Navitas Semiconductor has announced a breakthrough 20-year limited warranty for its GaNFast technology – 10x longer than typical silicon, SiC or discrete GaN power semiconductors – and a critical accelerator for GaN’s adoption in data center, solar and EV markets.
GaN is a next-generation semiconductor te
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Date:
03/28/2022
The devices build on Infineon’s state-of-the-art SiC trench technology and come in a compact D 2PAK SMD 7-pin package with .XT interconnection technology. They target high power applications including servers, telecom, industrial SMPS, fast EV charging, motor drives, solar energy systems, energy storage, and batter
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Date:
03/28/2022
Aiming at space-limited designs, the next-generation devices complement the existing 2EDN driver ICs by providing higher system-level efficiencies, excellent power density, and consistent system robustness with fewer external components. Building upon this expansion, the 2EDN family is now able to drive the power s
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Date:
03/28/2022
The devices are optimized for automotive discrete traction inverters and expand Infineon's portfolio of discrete high-voltage devices for automotive applications. Due to their high quality, the IGBTs meet and exceed the industry standard AECQ101 for automotive components. As a result, the devices can significantly increa
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Date:
03/28/2022
System designers of traction power units (TPUs), auxiliary power units (APUs), solid-state transformers (SSTs), industrial motor drives and energy infrastructure solutions require high-voltage switching technology to increase efficiency, reduce system size and weight and enhance reliability. Microchip Technology In
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Date:
03/21/2022
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Figure 1: Power supplies used in semiconductor fab equipment are essential for every task at the front and back end of the process, with power density and the ability to be as close to the tool as possible being especially critical in next-gen fabs
Semiconductor device fabrication processes have several distinct and intricate steps. Power supplies used in semiconductor fab equipment are essential for every task at the front and back end of the process. Due to its power density, reliability, and design flexibility, engineers are seeing the benefits of using
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Date:
03/15/2022
EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 APulsed, rad-hard eGaN FET in a small 13.9 mm2 footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale p
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Date:
03/15/2022
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