Infineon’s CoolGaN bidirectional switch (BDS) 650 V G5 can replace two conventional switches, reducing component count, cost, size, and overall power losses.
Infineon Technologies AG is introducing the CoolGaN™ bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages Infineon's robust gate injection transistor (GI
Efficient Power Conversion (EPC), the leader in enhancement-mode gallium nitride (GaN) power transistors and ICs, announces the availability of the EPC2366, a 40 V, 0.8 mΩ device designed to displace legacy low-voltage silicon MOSFETs in demanding applications such as high-performance DC-DC converters and sy
