Technical Features

April 2013
Impact of UnitedSiC Gen 4 Technology on Electric Vehicles

Table 1: Comparison of parameters for G4 750V SiC FETs with similar 650V SiC MOSFETs and 600V Superjunction fast diode FETs

The automotive market for Silicon Carbide (SiC) devices is widely expected to exceed the $1.5 billion threshold in 2025 with an annual growth rate (CAGR) of 38 percent. This is driven by the value provided by SiC based components in On-board chargers, DC-DC converters and in Traction inverters. With the launch of
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Date:
01/05/2021
Power interface module selection
A comparison of alternative on-board power solutions is rarely at the top of the agenda for a board designer. Often designers will use a previous solution because all available resources and time
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Date:
04/30/2013
Considering that almost 60 percent of total electric energy produced worldwide is used to run motors of every size, shape and efficiency, the adoption of variable speed drives can save as much as 70 percent of energy costs by controlling the speed of the load. New energy efficiency standards for compressors an
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Date:
04/15/2013
Many high power systems require the use of a hot-swap device to safely control of the inrush currents at powerup and provide fault protection. These circuits are commonly found in systems such as servers, network switches, redundant-array-of-independent-disk (RAID) storage, and other forms of communications infrastru
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Date:
04/15/2013