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Technical Features

April 2013
Extremely Compact Isolated Auxiliary Supply for SiC-MOSFET Gate Driver

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Figure 1: Topology of a SiC-MOSFET half-bridge with highlighted parasitic inductances

With the increasing spread of high-voltage power semiconductor components build with silicon carbide (SiC) technology, which operate at switching frequencies above 100 kHz, the requirements for their gate control are becoming more and more demanding. Besides the bipolar, positive and negative driving voltages fo
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Date:
09/30/2020
Power interface module selection
A comparison of alternative on-board power solutions is rarely at the top of the agenda for a board designer. Often designers will use a previous solution because all available resources and time
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Date:
04/30/2013
Considering that almost 60 percent of total electric energy produced worldwide is used to run motors of every size, shape and efficiency, the adoption of variable speed drives can save as much as 70 percent of energy costs by controlling the speed of the load. New energy efficiency standards for compressors an
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Date:
04/15/2013
Many high power systems require the use of a hot-swap device to safely control of the inrush currents at powerup and provide fault protection. These circuits are commonly found in systems such as servers, network switches, redundant-array-of-independent-disk (RAID) storage, and other forms of communications infrastru
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Date:
04/15/2013