Technical Features
April 2013
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Figure 1: The Qorvo SiC FET – a ‘cascode’ of a Si-MOSFET and SiC JFET
The performance of wide band-gap (WBG) semiconductor switches such as silicon carbide cascode FETs (‘SiC FET’ henceforth) [1] (Figure 1) and SiC MOSFETs is closely tied to its package. At the pure technology level, nanosecond switching speed and low specific on-resistance result in very low losses, allowing much
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Date:
05/30/2023
A comparison of alternative on-board power solutions is rarely at the top of the agenda for a board designer. Often designers will use a previous solution because all available resources and time
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Date:
04/30/2013
Considering that almost 60 percent of total electric energy produced worldwide is used to run motors of every size, shape and efficiency, the adoption of variable speed drives can save as much as 70 percent of energy costs by controlling the speed of the load. New energy efficiency standards for compressors an
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Date:
04/15/2013
Many high power systems require the use of a hot-swap device to safely control of the inrush currents at powerup and provide fault protection.
These circuits are commonly found in systems such as servers, network switches, redundant-array-of-independent-disk (RAID) storage, and other forms of communications infrastru
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Date:
04/15/2013
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