Technical Features
February 2019
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Figure 1: IGBT cross sectional structure
Today’s Power Electronic market is driving development of compact, low-loss, and, high-reliability IGBT modules to optimize power conversion systems. In response, Fuji Electric has developed our 7th generation X-Series IGBT technology combining enhanced semiconductor chip characteristics and improved
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Date:
06/16/2019
Slightly more than forty years ago, the silicon power MOSFET was a disruptive technology that displaced the bipolar transistor as the power conversion device of choice for the semiconductor industry – and a $12B market emerged.
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Date:
02/24/2019
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