Technical Features

February 2019
Impact of UnitedSiC Gen 4 Technology on Electric Vehicles

Table 1: Comparison of parameters for G4 750V SiC FETs with similar 650V SiC MOSFETs and 600V Superjunction fast diode FETs

The automotive market for Silicon Carbide (SiC) devices is widely expected to exceed the $1.5 billion threshold in 2025 with an annual growth rate (CAGR) of 38 percent. This is driven by the value provided by SiC based components in On-board chargers, DC-DC converters and in Traction inverters. With the launch of
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Date:
01/05/2021
Slightly more than forty years ago, the silicon power MOSFET was a disruptive technology that displaced the bipolar transistor as the power conversion device of choice for the semiconductor industry – and a $12B market emerged. Click image to enlarge GaN Cube   The dynamics of this transition taught us that there a
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Date:
02/24/2019