Technical Features

February 2019
Developing a New Approach to Predicting the Behavior of GaN Devices

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Figure 1: Infineon’s four-step qualification plan for CoolGaN™ devices

­Introduction Silicon semiconductor technology has evolved considerably over the past 50 years, during which time, multiple failure modes affecting device reliability have been discovered, researched, and addressed. This has led to the development of models and equations for failure modes like time-de
Slightly more than forty years ago, the silicon power MOSFET was a disruptive technology that displaced the bipolar transistor as the power conversion device of choice for the semiconductor industry – and a $12B market emerged. Click image to enlarge GaN Cube   The dynamics of this transition taught us that there a
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