Technical Features
February 2019
Table 1: Comparison of parameters for G4 750V SiC FETs with similar 650V SiC MOSFETs and 600V Superjunction fast diode FETs
The automotive market for Silicon Carbide (SiC) devices is widely expected to exceed the $1.5 billion threshold in 2025 with an annual growth rate (CAGR) of 38 percent. This is driven by the value provided by SiC based components in On-board chargers, DC-DC converters and in Traction inverters. With the launch of
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Date:
01/05/2021
Slightly more than forty years ago, the silicon power MOSFET was a disruptive technology that displaced the bipolar transistor as the power conversion device of choice for the semiconductor industry – and a $12B market emerged.
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GaN Cube
The dynamics of this transition taught us that there a
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Date:
02/24/2019
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