Technical Features
August 2013
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Figure 1. Comparing SiC with conventional Silicon MOSFETs reveals the clearly superior semiconductor characteristics of the SiC material, which allows the construction of significantly smaller switching devices
The lower sheet resistance of wide-bandgap SiC materials (typically 1/100th that of conventional silicon) results in smaller devices for a given current capacity – valuable in space saving applications. In addition, the electric-breakdown- field for SiC (approximately 2.8 MV/cm) allows for a much
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Date:
12/03/2019
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Figure 1: Simplified thermal model using datasheet values. The thermal interface material is hidden inside the yellow area
Proper thermal design in power electronics is the necessary fundamental to ensure that the final application will operate throughout the predicted lifetime. Thus, it remains a key element in the design
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Date:
08/22/2013
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Fig. 1. Comparison of measurement with FEM-Simulation and calculation results
The transient thermal resistance (Zth) of a power module describes a key performance that is used to estimate the maximum output current for transient loads. It can also be used to calculate the temperature
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Date:
08/16/2013
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Figure 1: Transducer accuracy
The automotive industry has been undergoing a major transformation during the past few years. After more than a century of improving and refining the traditional gasoline and diesel engines that
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Date:
08/13/2013
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Figure 1
Price, performance and availability will be the obvious primary determinants of the initial sales growth of GaN transistors and diodes. Product acceptance also hinges upon the additional factors
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Date:
08/06/2013
In any operating system, distribution losses are a significant factor in overall system efficiency at every level. In the case of telecom central office applications, traditional 48Vdc systems become very expensive to install (due to increased copper cost and weight) and run (due to I2R loss) while in large
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Date:
08/01/2013
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