Technical Features
August 2013
Table 1: Comparison of parameters for G4 750V SiC FETs with similar 650V SiC MOSFETs and 600V Superjunction fast diode FETs
The automotive market for Silicon Carbide (SiC) devices is widely expected to exceed the $1.5 billion threshold in 2025 with an annual growth rate (CAGR) of 38 percent. This is driven by the value provided by SiC based components in On-board chargers, DC-DC converters and in Traction inverters. With the launch of
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Date:
01/05/2021
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Figure 1: Simplified thermal model using datasheet values. The thermal interface material is hidden inside the yellow area
Proper thermal design in power electronics is the necessary fundamental to ensure that the final application will operate throughout the predicted lifetime. Thus, it remains a key element in the design
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Date:
08/22/2013
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Fig. 1. Comparison of measurement with FEM-Simulation and calculation results
The transient thermal resistance (Zth) of a power module describes a key performance that is used to estimate the maximum output current for transient loads. It can also be used to calculate the temperature
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Date:
08/16/2013
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Figure 1: Transducer accuracy
The automotive industry has been undergoing a major transformation during the past few years. After more than a century of improving and refining the traditional gasoline and diesel engines that
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Date:
08/13/2013
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Figure 1
Price, performance and availability will be the obvious primary determinants of the initial sales growth of GaN transistors and diodes. Product acceptance also hinges upon the additional factors
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Date:
08/06/2013
In any operating system, distribution losses are a significant factor in overall system efficiency at every level. In the case of telecom central office applications, traditional 48Vdc systems become very expensive to install (due to increased copper cost and weight) and run (due to I2R loss) while in large da
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Date:
08/01/2013
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