Technical Features
March 2011
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Figure 1. Comparing SiC with conventional Silicon MOSFETs reveals the clearly superior semiconductor characteristics of the SiC material, which allows the construction of significantly smaller switching devices
The lower sheet resistance of wide-bandgap SiC materials (typically 1/100th that of conventional silicon) results in smaller devices for a given current capacity – valuable in space saving applications. In addition, the electric-breakdown- field for SiC (approximately 2.8 MV/cm) allows for a much
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Date:
12/03/2019
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Figure 1: I-V characteristics of 10ms half sine pulses at different peak currents. Curve (c) is slightly above, curve (d) is far above the destruction threshold.
The ability of silicon power diodes to withstand a rapid forward current load, described by its i2t-value, is an important criterion that has to be regarded in the selection of the proper devices
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Date:
03/24/2011
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Figure 1 - Typical wind farm configuration
The grounding transformer is an often neglected component of the wind farm - shunted off to a sidebar issue. However, those who neglect to adequately plan for grounding transformers do so at their
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Date:
03/24/2011
Photo by Solarion AG
Thin-film solar cells are developing into a rapidly growing market segment. If their commercial potential is to be fully exploited, the solar modules must be produced in a roll-to-roll manufacturing
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Date:
03/24/2011
ITT Interconnect Solutions' EVC series connectors
This advanced charging in electric vehicles (EV) requires highly efficient power contacts to provide flexible functionality, with minimal modifications, across a power range from a low of 15 amps/120
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Date:
03/24/2011
An engineer designing with FPGAs or Processors often has to provide some serious amount of power at high efficiency over load. Not only must the rails be regulated correctly and not overheat, but additional functionality may be required.
Recent evaluation boards from Xilinx (ML605 and SP605) for Virtex-6
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Date:
03/15/2011
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