Technical Features
March 2011
Table 1: Comparison of parameters for G4 750V SiC FETs with similar 650V SiC MOSFETs and 600V Superjunction fast diode FETs
The automotive market for Silicon Carbide (SiC) devices is widely expected to exceed the $1.5 billion threshold in 2025 with an annual growth rate (CAGR) of 38 percent. This is driven by the value provided by SiC based components in On-board chargers, DC-DC converters and in Traction inverters. With the launch of
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Date:
01/05/2021
Photo by Solarion AG
Thin-film solar cells are developing into a rapidly growing market segment. If their commercial potential is to be fully exploited, the solar modules must be produced in a roll-to-roll manufacturing
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Date:
03/24/2011
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Figure 1 - Typical wind farm configuration
The grounding transformer is an often neglected component of the wind farm - shunted off to a sidebar issue. However, those who neglect to adequately plan for grounding transformers do so at their
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Date:
03/24/2011
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Figure 1: I-V characteristics of 10ms half sine pulses at different peak currents. Curve (c) is slightly above, curve (d) is far above the destruction threshold.
The ability of silicon power diodes to withstand a rapid forward current load, described by its i2t-value, is an important criterion that has to be regarded in the selection of the proper devices
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Date:
03/24/2011
ITT Interconnect Solutions' EVC series connectors
This advanced charging in electric vehicles (EV) requires highly efficient power contacts to provide flexible functionality, with minimal modifications, across a power range from a low of 15 amps/120
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Date:
03/24/2011
An engineer designing with FPGAs or Processors often has to provide some serious amount of power at high efficiency over load. Not only must the rails be regulated correctly and not overheat, but additional functionality may be required.
Recent evaluation boards from Xilinx (ML605 and SP605) for Virtex-6 and Spart
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Date:
03/15/2011
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