Technical Features

February 2017

Click image to enlarge

Figure 1: Schematic of a high-voltage PowiGaN cascode switch

1250 V/1700 V GaN HEMTs for NVIDIA 800 VDC Architecture

Kamal Varadarajan & Chris Lee, Power Integrations

GaN-based power semiconductors are ideal for high-efficiency power converters thanks to their superior material properties. However, very few manufacturers offer GaN HEMTs rated above 650 V. The main challenge is that GaN devices built on silicon substrates require very thick buffer layers, which adds significant pr

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Date:

01/31/2026

Increasing power density

Y. Iwasaki, M. Chounabayashi, M. Nakazawa, S. Iwamoto, Y. Oonishi, M. Hori, H. Kakiki and O. Ikawa

Current market requirements are trending towards further downsizing and increased efficiency of power conversion systems. For this reason, enhanced power density of the power modules will be critical in order to respond to the evolving needs of the market. In order to increase the power density, All-SiC modules wi

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Date:

02/28/2017

Empowering wireless charger design

Eko Lisuwandi, Linear Technology

The use of batteries in everyday devices is getting more ubiquitous. In many of these products, a charging connector is difficult or impossible to use. For example, some products require sealed enclosures to protect sensitive electronics from harsh environments and to enable for convenient cleaning or st

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Date:

02/01/2017