Technical Features

April 2010

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Figure 1: Schematic of a high-voltage PowiGaN cascode switch

1250 V/1700 V GaN HEMTs for NVIDIA 800 VDC Architecture

Kamal Varadarajan & Chris Lee, Power Integrations

GaN-based power semiconductors are ideal for high-efficiency power converters thanks to their superior material properties. However, very few manufacturers offer GaN HEMTs rated above 650 V. The main challenge is that GaN devices built on silicon substrates require very thick buffer layers, which adds significant pr

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Date:

01/31/2026

Cool Power from Danfoss

Klaus Olesen, R&D, Danfoss, Schleswig, Germany

Modern wind turbines are being designed for a lifetime of 15-20 years. In the special case of wind power, the turbines are expected to run 24 hours a day, 365 days a year when the wind allows.

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Date:

04/01/2010

The Way Forward for Solar

Paul Engle, CEO, Enecsys Ltd. Cambridge, England

PV modules, or panels, produce direct current (DC) electricity, typically with a peak output up to 250 Watts. With suitable control circuits, they can be used to charge a battery - which also generates

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Date:

04/01/2010

Project Management Metrics Focus

J. LeRoy Ward, PMP, PgMP, Executive Vice President, Product Strategy & Management, ESI International

In the past two years of the recession, the power systems design industry has been in the very challenging position of fine-tuning solutions to address the ever-pressing issue of energy supply

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Date:

04/01/2010

Modular UPS Systems

Alan Luscombe, Sales and Marketing Director, Uninterruptible Power Supplies Ltd (UPSL)

A tailored and integrated approach to power protection, comprising modular UPS and fully-matched standby generators, is helping businesses sustain vital uptime and availability. Changes

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Date:

04/01/2010