Technical Features
December 2016
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Figure 1: The Qorvo SiC FET – a ‘cascode’ of a Si-MOSFET and SiC JFET
The performance of wide band-gap (WBG) semiconductor switches such as silicon carbide cascode FETs (‘SiC FET’ henceforth) [1] (Figure 1) and SiC MOSFETs is closely tied to its package. At the pure technology level, nanosecond switching speed and low specific on-resistance result in very low losses, allowing much
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Date:
05/30/2023
In today’s data acquisition systems (DAQs), performance boundaries are continually being pushed. System designers require higher speed, lower noise, and better total harmonic distortion (THD) performance; all of which are possible but none of which are free. These performance improvements typically co
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Date:
12/07/2016
The EPCOS PQSine active harmonic filter
To a non-engineer, the word “harmonics” has a beautiful sound – one that to many conjures up an image of a concert with instruments playing beautiful music. The harmony is what combines with the melody to turn the composition into something complex and beautiful rather than being just a simple tune.
However, when most
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Date:
12/07/2016
The creepage distance is the shortest path between two conductors along the surface of an isolator (typically a PCB)
When designing a switch-mode power supply (SMPS) operating losses and the ability to dissipate heat are critical selection criteria for MOSFETs. The standard TO-220 package is generally good at dissipating heat and the wide range of heatsinks and forced-air cooling options available can easily improve this. Le
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Date:
12/04/2016
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