Technical Features
February 2020
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Figure 1: Infineon’s four-step qualification plan for CoolGaN™ devices
Introduction
Silicon semiconductor technology has evolved considerably over the past 50 years, during which time, multiple failure modes affecting device reliability have been discovered, researched, and addressed.
This has led to the development of models and equations for failure modes like time-de
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Date:
02/24/2023
Figure 1: Si superjunction and SiC MOSFETs have a vertical structure; GaN MOSFETs on the other hand have a lateral structure
Much is made of wide bandgap technologies, especially since GaN and SiC often have a superior performance on paper when compared to classic Si switching devices. These improvements include lower on-resistance and higher thermal conductivity, features that enable improvements in efficiency and operation at higher te
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Date:
02/29/2020
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Figure 1. Simplistic inductor equivalent circuit
Despite its long history, the theory of magnetics component design still eludes many engineers, and with some justification; a good description of the effect of a magnetic field is the ‘relativistic correction to the force between charged particles when in motion.’ Many understand the behaviour of magnetics co
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Date:
02/28/2020
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Figure 1: Waveforms during Startup Phase
Internet-connected devices rely on two core features, communications backhaul and power. With IoT devices, three core concerns regularly crop up: power, communications and security. Wireless technologies, like WiFi, have held the spotlight in the marketplace for years, but they struggle with these three problems. Wi
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Date:
02/28/2020
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