Technical Features

February 2020
StrongIRFET™ 2 Power MOSFETs in 30 V are Ready for Future Applications

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Figure 1: StrongIRFET™ and OptiMOS™ power MOSFET portfolio

­The rapidly evolving world of electronics fuels the need for more efficient, powerful, and compact components. This drive for innovation extends to silicon power MOSFETs, where substantial efforts are dedicated to enhancing capabilities for a wide range of power electronic applications, including drives, switched
Date:
06/28/2024
All Semiconductor Switch Technologies Lead to Rome

Figure 1: Si superjunction and SiC MOSFETs have a vertical structure; GaN MOSFETs on the other hand have a lateral structure

Much is made of wide bandgap technologies, especially since GaN and SiC often have a superior performance on paper when compared to classic Si switching devices. These improvements include lower on-resistance and higher thermal conductivity, features that enable improvements in efficiency and operation at higher te
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Date:
02/29/2020
Collaborating for Success in Custom Power Magnetics Designs

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Figure 1. Simplistic inductor equivalent circuit

Despite its long history, the theory of magnetics component design still eludes many engineers, and with some justification; a good description of the effect of a magnetic field is the ‘relativistic correction to the force between charged particles when in motion.’ Many understand the behaviour of magnetics co
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Date:
02/28/2020
Designing a PoE-PD for IoT

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Figure 1: Waveforms during Startup Phase

Internet-connected devices rely on two core features, communications backhaul and power. With IoT devices, three core concerns regularly crop up: power, communications and security. Wireless technologies, like WiFi, have held the spotlight in the marketplace for years, but they struggle with these three problems. Wi
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Date:
02/28/2020
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