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Technical Features

February 2020
Extremely Compact Isolated Auxiliary Supply for SiC-MOSFET Gate Driver

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Figure 1: Topology of a SiC-MOSFET half-bridge with highlighted parasitic inductances

With the increasing spread of high-voltage power semiconductor components build with silicon carbide (SiC) technology, which operate at switching frequencies above 100 kHz, the requirements for their gate control are becoming more and more demanding. Besides the bipolar, positive and negative driving voltages fo
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Date:
09/30/2020
All Semiconductor Switch Technologies Lead to Rome

Figure 1: Si superjunction and SiC MOSFETs have a vertical structure; GaN MOSFETs on the other hand have a lateral structure

Much is made of wide bandgap technologies, especially since GaN and SiC often have a superior performance on paper when compared to classic Si switching devices. These improvements include lower on-resistance and higher thermal conductivity, features that enable improvements in efficiency and operation at higher te
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Date:
02/29/2020
Collaborating for Success in Custom Power Magnetics Designs

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Figure 1. Simplistic inductor equivalent circuit

Despite its long history, the theory of magnetics component design still eludes many engineers, and with some justification; a good description of the effect of a magnetic field is the ‘relativistic correction to the force between charged particles when in motion.’ Many understand the behaviour of magnetics co
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Date:
02/28/2020
Designing a PoE-PD for IoT

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Figure 1: Waveforms during Startup Phase

Internet-connected devices rely on two core features, communications backhaul and power. With IoT devices, three core concerns regularly crop up: power, communications and security. Wireless technologies, like WiFi, have held the spotlight in the marketplace for years, but they struggle with these three problems. Wi
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Date:
02/28/2020