Technical Features

February 2020
Impact of UnitedSiC Gen 4 Technology on Electric Vehicles

Table 1: Comparison of parameters for G4 750V SiC FETs with similar 650V SiC MOSFETs and 600V Superjunction fast diode FETs

The automotive market for Silicon Carbide (SiC) devices is widely expected to exceed the $1.5 billion threshold in 2025 with an annual growth rate (CAGR) of 38 percent. This is driven by the value provided by SiC based components in On-board chargers, DC-DC converters and in Traction inverters. With the launch of
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Date:
01/05/2021
All Semiconductor Switch Technologies Lead to Rome

Figure 1: Si superjunction and SiC MOSFETs have a vertical structure; GaN MOSFETs on the other hand have a lateral structure

Much is made of wide bandgap technologies, especially since GaN and SiC often have a superior performance on paper when compared to classic Si switching devices. These improvements include lower on-resistance and higher thermal conductivity, features that enable improvements in efficiency and operation at higher te
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Date:
02/29/2020
Collaborating for Success in Custom Power Magnetics Designs

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Figure 1. Simplistic inductor equivalent circuit

Despite its long history, the theory of magnetics component design still eludes many engineers, and with some justification; a good description of the effect of a magnetic field is the ‘relativistic correction to the force between charged particles when in motion.’ Many understand the behaviour of magnetics co
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Date:
02/28/2020
Designing a PoE-PD for IoT

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Figure 1: Waveforms during Startup Phase

Internet-connected devices rely on two core features, communications backhaul and power. With IoT devices, three core concerns regularly crop up: power, communications and security. Wireless technologies, like WiFi, have held the spotlight in the marketplace for years, but they struggle with these three problems. Wi
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Date:
02/28/2020