Technical Features

November 2025

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Figure 1: Conventional Intermediate Bus Architectures use a fixed-ratio isolated bus converter (IBC) to step down 48V to a 12V intermediate rail, which then feeds niPOL converters

Current Multipliers: The Obvious Choice for Powering AI Processors and Other Demanding Applications

Tom Curatolo, Industrial BU Apps Engineer, Vicor

AI processors can draw up to thousands of amps while operating at voltages well below 1V. This current demand is unprecedented and has turned the power delivery network (PDN) into a major system bottleneck. With every amp pushed through PCB or substrate copper power planes, conductive losses and, thermal m

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Date:

10/31/2025

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Figure 1: Infineon XDP™ eFuses XDP730 and XDP72x

Infineon eFuses for AI Server Power Applications

Tao Zhao, Nitish Agarwal, Prashanth Sudarshan Pillamari, Ian Fang, Helen Hongying Ding, Infineon Technologies Americas Corporation

1. The birth of eFuses AI servers are among the most demanding pieces of modern data-center equipment. Packs of GPUs, TPUs, or NPUs, ultrafast local NVMe storage, high-density memory, and massive switching fabrics push per-server power budgets into the kilowatt range. Those power rails are high-current, transient,

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Date:

11/28/2025

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Figure 1: Block diagram of a solid-state circuit breaker

SiC JFETs are the Future of Solid-State Circuit Breakers

Michal Csiba, Technical Marketing Analyst, onsemi

A circuit breaker is a device used to protect electrical circuits from damage caused by overcurrent, overload, and short circuits. An electromechanical breaker (EMB), the de facto standard, consists of two separate triggers: bimetal, which is slow and tripped by overcurrent, and electromagnetic, which is fast an

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Date:

11/01/2025

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Figure 1: EOS worst case – high-side gate drain short whilst the low-side is on

AI PSUs Need Cutting Edge Gate Driver ICs

Hubert Baierl, Marketing Director, Infineon Technologies

Achieving a 100 W/inch3 power density in an 8 kW SMPS, with a 97.5% peak efficiency and a compact 1U form factor can be quite the design challenge. But it is now within reach thanks to a smart combination of switching devices: · PFC stage: 650 V silicon carbide (SiC) MOSFETs (I

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Date:

11/01/2025

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Figure 1: Cross-sectional views illustrating the cell pitch for different Power MOSFET technologies: double trench, asymmetric trench, traditional planar, and trench-assisted planar technologies

Trench-Assisted Planar SiC MOSFET Architecture Overview

Siddarth Sundaresan, Sr. VP of Technology, Sumit Jadav, Sr. Director of Technical Marketing (GaN & SiC), Arash Salemi, Senior Manager Technical Marketing and Jaehoon Park, Director of SiC Device Technology, all Navitas Semiconductor

The two established architectures of silicon carbide (SiC) MOSFETs for high-power systems – planar and trench – both present a fundamental unappealing compromise for power engineers. The manufacturing simplicity of the planar gate structure enables increased yields and therefore lower costs. This stru

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Date:

11/01/2025

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Figure 1: Cross-sections of each type of aluminum electrolytic capacitor: wet, polymer, and hybrid

Stacked Ceramic Capacitors’ Impact on Switch Mode Power Supplies

Ron Demcko, Senior Fellow, KYOCERA AVX Corporation

Not all modern electronics require increased power density. But it’s safe to say that getting more power out of power supplies with equivalent or smaller weights and volumes is of near universal interest in the design world, regardless. Switch Mode Power Supplies Switch mode power supplies (SMPS) are on

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Date:

11/01/2025

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Figure 1: A diagram displaying a PoE Switch at the center, distributing both network connectivity and power to various peripheral devices like IP cameras, IP phones, and wireless access points

Power Over Ethernet: Driving Simplicity and Intelligence at the Edge

Jeff Kring, Bel Fuse

Ethernet has long been the backbone of digital communication. It is valued for its ability to support high data rates over long distances and its versatility across consumer, commercial, automotive, and industrial sectors. However, as the demand for intelligent edge devices grows, Ethernet is evolving. Power ov

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Date:

11/01/2025

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Figure 1: Thermal at 12VIN, 0.6VOUT, 20A load in room temperature

Low-Voltage, High-Current Design for Advanced Processing Solutions

Haisong Deng, Senior Applications Engineer, Analog Devices

Power solutions for advanced processing require several low voltage supplies, including 1.1V for DDR, 0.8 V for core, and 3.3 V/1.8 V for I/O devices. Because of the high density of semiconductor integration, the microprocessor is more power-hungry and requires more supply current. There is also a high dema

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Date:

11/01/2025

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How Wi-Fi HaLow Is Shaping the Future of IoT and Smart Cities

Michael De Nil, Co-Founder and CEO, Morse Micro

At the heart of this transformation into digital ecosystems has been the Internet of Things (IoT), where connected sensors, smart meters, and embedded controls work together to optimize how cities consume energy, monitor traffic, reduce emissions, and protect public safety. As the scale and complexity of these

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Date:

11/01/2025

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Figure 1: Power relays play a critical role in controlling high-power loads in HVAC systems

Power Relays in HVAC Design

Nick Grillone, Applications Engineer, Same Sky

Power relays act as the essential switching elements that allow a thermostat or controller to direct real power flow. Each time a compressor engages, a fan motor starts, a heating strip energizes, or a heat pump shifts modes, the relay must execute a clean, consistent, and safe state transition (Figure 1). Be

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Date:

11/01/2025