Technical Features

October 2015
Combining Lowest RDS(on) + SMT for Space-Limited, High-Performance Apps

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Figure 1: The Qorvo SiC FET – a ‘cascode’ of a Si-MOSFET and SiC JFET

The performance of wide band-gap (WBG) semiconductor switches such as silicon carbide cascode FETs (‘SiC FET’ henceforth) [1] (Figure 1) and SiC MOSFETs is closely tied to its package. At the pure technology level, nanosecond switching speed and low specific on-resistance result in very low losses, allowing much
Today’s digital lifestyles are driving demands for ultra-mobile computers: thin, lightweight, always-connected PCs that allow their owners to work wherever they need to be, unhindered by any need for frequent recharging. Efficient power management significantly influences the computer’s ability to meet u
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With a global population that is both living longer and experiencing an increasing rate of chronic disease, combined with economic factors that are driving the increased of healthcare in the home, there is a growing demand for medical electrical equipment designed for use in home environment, requiring from po
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