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Technical Features

February 2016
Extremely Compact Isolated Auxiliary Supply for SiC-MOSFET Gate Driver

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Figure 1: Topology of a SiC-MOSFET half-bridge with highlighted parasitic inductances

With the increasing spread of high-voltage power semiconductor components build with silicon carbide (SiC) technology, which operate at switching frequencies above 100 kHz, the requirements for their gate control are becoming more and more demanding. Besides the bipolar, positive and negative driving voltages fo
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Gadgets and vital connected devices in the Internet of Things (IoT) are everywhere, and we see them gradually changing our lives. The exponential development of products with embedding radio transmitters is creating some concerns in terms of interference and equipment disturbance, especially in the case of medical ap
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