Technical Features

February 2016
1250 V/1700 V GaN HEMTs for NVIDIA 800 VDC Architecture

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Figure 1: Schematic of a high-voltage PowiGaN cascode switch

GaN-based power semiconductors are ideal for high-efficiency power converters thanks to their superior material properties. However, very few manufacturers offer GaN HEMTs rated above 650 V. The main challenge is that GaN devices built on silicon substrates require very thick buffer layers, which adds significant pr
Date:
01/31/2026
Gadgets and vital connected devices in the Internet of Things (IoT) are everywhere, and we see them gradually changing our lives. The exponential development of products with embedding radio transmitters is creating some concerns in terms of interference and equipment disturbance, especially in the case of medical ap
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Date:
02/25/2016
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