Technical Features
June 2014
Table 1: Comparison of parameters for G4 750V SiC FETs with similar 650V SiC MOSFETs and 600V Superjunction fast diode FETs
The automotive market for Silicon Carbide (SiC) devices is widely expected to exceed the $1.5 billion threshold in 2025 with an annual growth rate (CAGR) of 38 percent. This is driven by the value provided by SiC based components in On-board chargers, DC-DC converters and in Traction inverters. With the launch of
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Date:
01/05/2021
When Cloverland Electric Cooperative wanted to replace the aging subsea cable that serves Drummond Island in Michigan’s Upper Peninsula, they turned to experienced utility consultant GRP Engineering, Inc. to plan and design the tricky project. As the successful bidder to Cloverland Electric, Kerite Corporation pr
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Date:
06/30/2014
More than often it is common that when technical equipment fails, finding the root cause of the failure consumes significantly more time than actually fixing the problem. In highly sophisticated factory automation environments where capital-intensive equipment is in operation or where time-coupled chemical processes ar
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Date:
06/24/2014
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