Technical Features

June 2014
1250 V/1700 V GaN HEMTs for NVIDIA 800 VDC Architecture

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Figure 1: Schematic of a high-voltage PowiGaN cascode switch

GaN-based power semiconductors are ideal for high-efficiency power converters thanks to their superior material properties. However, very few manufacturers offer GaN HEMTs rated above 650 V. The main challenge is that GaN devices built on silicon substrates require very thick buffer layers, which adds significant pr
Date:
01/31/2026
When Cloverland Electric Cooperative wanted to replace the aging subsea cable that serves Drummond Island in Michigan’s Upper Peninsula, they turned to experienced utility consultant GRP Engineering, Inc. to plan and design the tricky project. As the successful bidder to Cloverland Electric, Kerite Corporation pr
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Date:
06/30/2014
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