Technical Features

May 2018

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Figure 1: Schematic of a high-voltage PowiGaN cascode switch

1250 V/1700 V GaN HEMTs for NVIDIA 800 VDC Architecture

Kamal Varadarajan & Chris Lee, Power Integrations

GaN-based power semiconductors are ideal for high-efficiency power converters thanks to their superior material properties. However, very few manufacturers offer GaN HEMTs rated above 650 V. The main challenge is that GaN devices built on silicon substrates require very thick buffer layers, which adds significant pr

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Date:

01/31/2026

Determination of the Ideal Power Inductor for Energy-Efficient Applications

Alexander Gerfer, Ranjith Bramanpalli, Jochen Baier, Würth Elektronik

Energy-efficient devices are important components for saving resources and protecting the environment. The more efficient the electronics, the longer the battery service life for mobile devices - and in large-scale industrial and server installations with thousands of loads, the energy requirement is markedly re

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Date:

05/28/2018

Advanced packaging methods for modern power supplies

Stefan Preimel, Concept and Application Engineer, Infineon Technologies

No matter the technical innovation or application, all modern technologies have one thing in common; they rely on a reliable, small and high performance power supply to be able to function and meet their specification. As end products become more complex, the design parameters for the power supply become more ch

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Date:

05/11/2018

Figure 1: Simplified hardware diagram

1.5kW Digital Totem Pole PFC Design for Air-Conditioner Using iMOTION Digital Controller

Wei Wu, Infineon Technologies

A lot of research focuses on bridgeless PFC in order to achieve higher system efficiency compared to traditional boost PFC. Most of the bridgeless PFC solutions suffer from EMI issues, which cause problems in applications where an inverter stage shares the same ground. In this case, the PFC stage generates

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Date:

05/09/2018