Technical Features
May 2018
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Figure 1: The Qorvo SiC FET – a ‘cascode’ of a Si-MOSFET and SiC JFET
The performance of wide band-gap (WBG) semiconductor switches such as silicon carbide cascode FETs (‘SiC FET’ henceforth) [1] (Figure 1) and SiC MOSFETs is closely tied to its package. At the pure technology level, nanosecond switching speed and low specific on-resistance result in very low losses, allowing much
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Date:
05/30/2023
Energy-efficient devices are important components for saving resources and protecting the environment. The more efficient the electronics, the longer the battery service life for mobile devices - and in large-scale industrial and server installations with thousands of loads, the energy requirement is markedly re
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Date:
05/28/2018
No matter the technical innovation or application, all modern technologies have one thing in common; they rely on a reliable, small and high performance power supply to be able to function and meet their specification. As end products become more complex, the design parameters for the power supply become more ch
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Date:
05/11/2018
Figure 1: Simplified hardware diagram
A lot of research focuses on bridgeless PFC in order to achieve higher system efficiency compared to traditional boost PFC. Most of the bridgeless PFC solutions suffer from EMI issues, which cause problems in applications where an inverter stage shares the same ground. In this case, the PFC stage generates
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Date:
05/09/2018
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