Technical Features

June 2010
1250 V/1700 V GaN HEMTs for NVIDIA 800 VDC Architecture

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Figure 1: Schematic of a high-voltage PowiGaN cascode switch

GaN-based power semiconductors are ideal for high-efficiency power converters thanks to their superior material properties. However, very few manufacturers offer GaN HEMTs rated above 650 V. The main challenge is that GaN devices built on silicon substrates require very thick buffer layers, which adds significant pr
Date:
01/31/2026
Keeping Systems Running Cooler
Taming the heat is one of the biggest design challenges facing system architects and power supply manufactures today. Free air flow through the power supply is critical for improving performance
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Date:
06/01/2010
Isolate to Communicate
RS485 networks provide the backbone for communications in applications ranging from industrial control systems to roadside traffic message boards. In environments where high voltages are present,
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Date:
06/01/2010
Maximized Manufacturability
Customers of power electronics increasingly require new, easy connection and mounting technologies. PressFIT technology creates the possibility of solderless mounting combined with an improved
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Date:
06/01/2010
Custom Power
Despite the best intentions at the outset of an electronic product's design, it is commonplace for the power supply specification to evolve during the process and to only be finalized late on.
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Date:
06/01/2010
Contain the Heat
Over the past few years, several manufacturers have developed high-power handling general purpose chip resistors covering a wide resistance range. Most of these high-power chip resistors are extensions
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Date:
06/01/2010
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