Technical Features

August 2016

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Figure 1: Schematic of a high-voltage PowiGaN cascode switch

1250 V/1700 V GaN HEMTs for NVIDIA 800 VDC Architecture

Kamal Varadarajan & Chris Lee, Power Integrations

GaN-based power semiconductors are ideal for high-efficiency power converters thanks to their superior material properties. However, very few manufacturers offer GaN HEMTs rated above 650 V. The main challenge is that GaN devices built on silicon substrates require very thick buffer layers, which adds significant pr

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Date:

01/31/2026

Power MOSFETs spearhead greater efficiency

Takashi Akiba, ON Semiconductor

Power MOSFETs have become the preferred choice as the main switching device within power supplies for a wide range of consumer and industrial electronics equipment. Because it has become more important to improve overall power supply efficiency to meet energy saving requirements from governmental and industry st

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Date:

08/29/2016

Smooth, quiet and efficient motion

Frank Malik, Toshiba Electronics Europe

Three-phase Brushless DC (BLDC) motors have become commonplace in applications such as electric fans, office automation equipment and home appliances. The nature of these applications means that not only must the motor driver dissipate as little power as possible, but it also must operate with the bare minimum of

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Date:

08/29/2016

Designing high-efficiency supplies for 24V+ industrial automation

Nazzareno (Reno) Rossetti, Ramesh Giri, and Viral Vaidya, Maxim Integrated

Industrial automation systems are undergoing a revolution to reduce latency and down time. This directly translates to increased profits for factory operators and machine builders. Dubbed Industry 4.0, this effort will add more intelligence across the factory floor from HMI panels and controllers to communication mo

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Date:

08/24/2016