Technical Features
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Figure 1: Gate driver circuit diagram with a Bourns transformer
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Figure 1: Switching waveforms using a moderate switching speed of ca. 5-10ns and a fast switching speed of ca. 1-2ns for 48V to 3.3V conversion at 300kHz
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Figure 1: Ideal double-pulse test simulation switching loss results are about 45% lower than those in the datasheet for the DUT, U2
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Figure 1: Smartphone screen-size and battery capacity has increased over 3x in 10 years. As new platforms have been released with faster charging rates, OEMs have moved to adopt gallium nitride (GaN) chargers for both accessory and ‘in-box’ options. Source: GSMArena, Navitas as of January 2021
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Figure 1. −3.3 V output low noise solution
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Figure 1 - Isolation Transformers provide galvanic Isolation between two (or more) windings called the Primary and Secondary
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Figure 1: Boost Converter with Thermal Management
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Figure 1: Performance comparison of GaN discrete (blue line) and GaN monolithich half bridge (green line) in a 12 V input, 12 V output buck converter operating at 1 MHz.
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Figure 1: Appropriate operating regimes for various devices types
