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Technical Features

April 2020
Extremely Compact Isolated Auxiliary Supply for SiC-MOSFET Gate Driver

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Figure 1: Topology of a SiC-MOSFET half-bridge with highlighted parasitic inductances

With the increasing spread of high-voltage power semiconductor components build with silicon carbide (SiC) technology, which operate at switching frequencies above 100 kHz, the requirements for their gate control are becoming more and more demanding. Besides the bipolar, positive and negative driving voltages fo
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April's Most-Read Articles
These are the technical features that grabbed the most eyeballs throughout the month of April, based on figures from Google Analytics. So while you're hunkered down in the home office (and possibly dealing with cabin fever), reacquaint yourselves with some of PSD's best content. GaN and 48 V - Where are We and Where are We Going? Author: Alex Lidow Ph.D., CEO and Co-founder, Efficient Power C
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