Technical Features
June 2013
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Figure 1: The Qorvo SiC FET – a ‘cascode’ of a Si-MOSFET and SiC JFET
The performance of wide band-gap (WBG) semiconductor switches such as silicon carbide cascode FETs (‘SiC FET’ henceforth) [1] (Figure 1) and SiC MOSFETs is closely tied to its package. At the pure technology level, nanosecond switching speed and low specific on-resistance result in very low losses, allowing much
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Date:
05/30/2023
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Figure 1: CAD drawing & photo of completed semi-custom design for a high-rel radar implementation within a space constrained enclosure
In what can be an increasingly cutthroat business environment, the engineers of original equipment manufacturers (OEMs) are under huge pressure to deliver products that will differentiate themselves
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Date:
06/28/2013
It is a well-known fact that engineers do not appreciate being advertised to. In my experience, they tend to prize function over style and want accurate information without attempts to massage the
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Date:
06/27/2013
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Figure 1: The AC line can feed a single larger AC/DC converter (top), or several smaller ones (bottom)—even with the same output voltage.
Naturally, when specifying an AC/DC supply for a new project, one needs to select a product with the right output voltage and current rating, as well as input voltage range. But it goes much deeper
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Date:
06/25/2013
The number of mobile broadband subscriptions has grown by around 45% year-on-year reaching 1.7 billion in 2012, according to data released in the latest Ericsson Mobility Report . In addition to this growth, there also is steady progress in the amount of data usage per subscription. The changing habits of people an
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Date:
06/10/2013
In support of Governor Andrew Cuomo's strategic vision to enable innovation-driven educational opportunities and further develop New York's high-tech workforce, SUNY's College of Nanoscale Science
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Date:
06/07/2013
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